G900N10T

$0.85

Description：MOSFET N-CH 100V 22A 55W 90M(MAX
Series：G
Mfr：Goford Semiconductor
Package：Tube

SKU:4735ba14d323 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G900N10T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N-CH 100V 22A 55W 90M(MAX. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G900N10T

Description：MOSFET N-CH 100V 22A 55W 90M(MAX
Series：G
Mfr：Goford Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：90mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1170 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：55W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for G900N10T

G900N10T

Single FETs, MOSFETs Overview

The G900N10T is an N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of 100V and a continuous drain current of 22A at 25°C case temperature. Maximum on-resistance is specified as less than 90mΩ at VGS=10V and less than 100mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-220 package.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for optimized conduction and switching performance
100% avalanche tested for enhanced reliability
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switch circuits
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (e.g., A1944.83-V1.0) against your design requirements. Confirm that the TO-220 packaging matches your PCB footprint and thermal management strategy. Ensure the gate drive voltage supports the specified threshold and on-resistance characteristics for optimal efficiency.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 100V blocking capability with moderate current handling up to 22A. Consider the thermal resistance values when designing heat sinks, as the TO-220 package dissipates 55W under ideal conditions. Verify that the gate charge parameters align with your driver's capabilities to minimize switching losses.

Single FETs, MOSFETs Part Context

This part belongs to Goford Semiconductor's lineup of N-channel power MOSFETs designed for general-purpose switching applications. The product line emphasizes cost-effective solutions utilizing trench technology for improved efficiency compared to traditional planar devices.