GB2X50MPS12-227

$67.87

Description：DIODE MOD SIC 1200V 93A SOT-227
Series：SiC Schottky MPS™

SKU:6a4ba0f28cec Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

GB2X50MPS12-227 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SIC 1200V 93A SOT-227. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for GB2X50MPS12-227

Description：DIODE MOD SIC 1200V 93A SOT-227
Series：SiC Schottky MPS™
Mfr：GeneSiC Semiconductor
Package：Tube
Diode Configuration：2 Independent
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：93A (DC)
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 50 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：40 µA @ 1200 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Chassis Mount
Package / Case：SOT-227-4, miniBLOC
Supplier Device Package：SOT-227
Grade：-
Qualification：-

Diode Arrays datasheet and documents for GB2X50MPS12-227

GB2X50MPS12-227

Diode Arrays Overview

The GB2X50MPS12-227 is a silicon carbide Schottky MPS diode rated at 1200V and 100A. It features a total capacitive charge of 534 nC, low thermal resistance, and temperature-independent fast switching. The device operates within a junction temperature range of -55°C to 175°C and utilizes an isolated SOT-227 package.

Diode Arrays Feature Summary

Enhanced surge and avalanche robustness
Positive temperature coefficient of forward voltage
High dv/dt ruggedness

Diode Arrays Applications

Electric vehicles and fast chargers
Solar inverters
Motor drives
Uninterruptible power supplies

Diode Arrays Procurement Notes

Verify the specific datasheet revision against the manufacturer's official website before finalizing designs. Confirm compliance with RoHS and REACH directives for your target market. Ensure mounting torque specifications are strictly followed during installation to maintain thermal performance and mechanical integrity.

Diode Arrays Selection Notes

Select this component for high-frequency applications requiring zero reverse recovery current. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider system efficiency gains from the positive temperature coefficient when designing parallel configurations.

Diode Arrays Part Context

This part belongs to the GeneSiC SiC Schottky MPS series. It is designed for high-power density systems where reduced cooling requirements and increased reliability are critical. The technology enables extremely fast switching capabilities suitable for modern power electronics.

Diode Arrays Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility in existing circuit layouts.