GC20N65QD

$1.38

Description：MOSFET N-CH 650V 20A 151W 170m(m
Series：-
Mfr：Goford Semiconductor
Package：Tube

SKU:b7b2872a2b14 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

GC20N65QD is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N-CH 650V 20A 151W 170m(m. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GC20N65QD

Description：MOSFET N-CH 650V 20A 151W 170m(m
Series：-
Mfr：Goford Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1729 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：151W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for GC20N65QD

GC20N65QD

Single FETs, MOSFETs Overview

The GC20N65QD is an N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor, utilizing advanced super junction technology. It features a 650V drain-source voltage rating and a continuous drain current of 20A at 25°C. The device achieves a maximum on-resistance of 190mΩ at VGS=10V, with a typical value of 164mΩ. Key dynamic parameters include a total gate charge of 39nC and a reverse recovery time of 109ns. Rated for a power dissipation of 151W, it operates within a junction temperature range of -55°C to +150°C and is housed in a TO-247 package.

Single FETs, MOSFETs Feature Summary

Advanced super junction technology provides excellent on-resistance and low gate charge for efficient operation.
Ultra-fast body diode characteristics support high-performance switching applications.
100% avalanche tested to ensure reliability under surge conditions.
TO-247 packaging facilitates direct mounting to heat sinks for effective thermal management.

Single FETs, MOSFETs Applications

Power factor correction (PFC) circuits
AC/DC power conversion systems
Industrial power supplies
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging quantities and tape-and-reel specifications. Ensure that the procurement channel sources genuine components directly from authorized distributors or the manufacturer to guarantee compliance with RoHS standards and prevent counterfeit risks. Confirm lead times and availability through verified supply chain partners prior to finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with low conduction losses. The TO-247 package is suitable for applications needing robust thermal performance and direct heatsink mounting. Evaluate the gate charge and switching speeds against the target frequency requirements to optimize driver design. Ensure the system's thermal management can handle the specified power dissipation and thermal resistance values under worst-case operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the GC series of super junction MOSFETs from Goford Semiconductor, designed for medium to high-power applications. The series leverages super junction architecture to achieve superior figure-of-merit compared to traditional planar technologies. These devices are positioned as alternatives for industrial and consumer power supplies where efficiency and reliability are critical.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility and thermal resistance values when substituting. Verify that the replacement device meets or exceeds the 650V breakdown voltage and 20A current ratings. Ensure the on-resistance and gate charge parameters align with the existing circuit design to maintain expected performance levels.