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GC2X100MPS06-227 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SIC 650V 209A SOT-227. Review the specifications below when checking this part for your BOM.
The GC2X100MPS06-227 is a dual independent Silicon Carbide Schottky MPS diode module rated at 650 V and 200 A per device. It utilizes an isolated SOT-227 package with a junction-to-case thermal resistance of 0.4 °C/W per leg. The component supports continuous forward currents up to 242 A at 75°C and operates within a temperature range of -55°C to 175°C. Key electrical parameters include a maximum reverse leakage current of 32 µA at 175°C, a typical forward voltage of 1.8 V at 100 A, and a total capacitive charge of 281 nC at 400 V.
Verify the specific manufacturing date code against the latest datasheet revision history to ensure compliance with current specifications. Confirm that the procurement channel is an authorized distributor for GeneSiC Semiconductor products to guarantee authenticity. Check for any recent Product Change Notifications (PCN) or End-of-Life announcements prior to finalizing orders.
Select this component for high-frequency applications requiring low switching losses and high reliability. Ensure the heatsink mounting torque meets the specified 1.5 Nm requirement for optimal thermal performance. Evaluate system efficiency gains from reduced cooling requirements against the initial component cost in high-power density designs.
This part belongs to the SiC Schottky MPS™ series by GeneSiC Semiconductor, now part of Navitas Semiconductor. The series focuses on high-performance silicon carbide devices for automotive, industrial, and defense applications. The SOT-227 package provides a robust mechanical solution for screw-mounting to heatsinks in demanding power electronics environments.
Public confirmed substitute part numbers are not available in the provided documentation.
The component features an isolated base with an isolation voltage of 3000 V RMS for 1 second at 50/60 Hz.
The device exhibits a positive temperature coefficient of forward voltage, which facilitates stable parallel operation without the risk of thermal runaway.
The maximum non-repetitive peak forward surge current is 2750 A at 25°C with a pulse duration of 10 µs.
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