Diode Arrays GC2X100MPS06-227 product image

GC2X100MPS06-227

  • Description:DIODE MOD SIC 650V 209A SOT-227
  • Series:SiC Schottky MPS™

SKU:8c47e074a067 Category: Brand:

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GC2X100MPS06-227 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SIC 650V 209A SOT-227. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for GC2X100MPS06-227

  • Description:DIODE MOD SIC 650V 209A SOT-227
  • Series:SiC Schottky MPS™
  • Mfr:GeneSiC Semiconductor
  • Package:Tube
  • Diode Configuration:2 Independent
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io) (per Diode):209A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 50 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:20 µA @ 650 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for GC2X100MPS06-227

GC2X100MPS06-227

Diode Arrays Overview

The GC2X100MPS06-227 is a dual independent Silicon Carbide Schottky MPS diode module rated at 650 V and 200 A per device. It utilizes an isolated SOT-227 package with a junction-to-case thermal resistance of 0.4 °C/W per leg. The component supports continuous forward currents up to 242 A at 75°C and operates within a temperature range of -55°C to 175°C. Key electrical parameters include a maximum reverse leakage current of 32 µA at 175°C, a typical forward voltage of 1.8 V at 100 A, and a total capacitive charge of 281 nC at 400 V.

Diode Arrays Feature Summary

  • Temperature-independent fast switching with zero reverse recovery current
  • Positive temperature coefficient of forward voltage for easy parallel operation without thermal runaway
  • High dv/dt ruggedness and enhanced surge and avalanche robustness

Diode Arrays Applications

  • EV Fast Chargers
  • Solar Inverters
  • Switched Mode Power Supply (SMPS)
  • Motor Drives
  • Uninterruptible Power Supply (UPS)

Diode Arrays Procurement Notes

Verify the specific manufacturing date code against the latest datasheet revision history to ensure compliance with current specifications. Confirm that the procurement channel is an authorized distributor for GeneSiC Semiconductor products to guarantee authenticity. Check for any recent Product Change Notifications (PCN) or End-of-Life announcements prior to finalizing orders.

Diode Arrays Selection Notes

Select this component for high-frequency applications requiring low switching losses and high reliability. Ensure the heatsink mounting torque meets the specified 1.5 Nm requirement for optimal thermal performance. Evaluate system efficiency gains from reduced cooling requirements against the initial component cost in high-power density designs.

Diode Arrays Part Context

This part belongs to the SiC Schottky MPS™ series by GeneSiC Semiconductor, now part of Navitas Semiconductor. The series focuses on high-performance silicon carbide devices for automotive, industrial, and defense applications. The SOT-227 package provides a robust mechanical solution for screw-mounting to heatsinks in demanding power electronics environments.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Diode Arrays FAQ

What is the isolation voltage rating for the GC2X100MPS06-227?

The component features an isolated base with an isolation voltage of 3000 V RMS for 1 second at 50/60 Hz.

How does the forward voltage behave with temperature changes?

The device exhibits a positive temperature coefficient of forward voltage, which facilitates stable parallel operation without the risk of thermal runaway.

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 2750 A at 25°C with a pulse duration of 10 µs.

GC2X100MPS06-227GC2X100MPS06-227

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