GC2X15MPS12-247

Diode Arrays Overview

The GC2X15MPS12-247 is a Silicon Carbide Schottky MPS diode rated for 1200V repetitive peak reverse voltage and 30A continuous forward current. It utilizes a TO-247-3 package with a junction-to-case thermal resistance of 0.75°C/W per leg. The device exhibits low forward voltage, high dV/dt ruggedness up to 200 V/ns, and zero reverse recovery current. Total capacitive charge is specified at 160 nC, supporting efficient high-frequency switching applications.

Diode Arrays Feature Summary

• Enhanced surge and avalanche robustness for improved system reliability
• Temperature independent fast switching with positive temperature coefficient
• Superior figure of merit Qrr/IF enabling extremely fast switching
• Low reverse leakage current and low thermal resistance

Diode Arrays Applications

• Power Factor Correction (PFC)
• Electric Vehicles and Battery Chargers
• Solar Inverters
• High Frequency Converters
• Switched Mode Power Supply (SMPS)

Diode Arrays Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing designs. Confirm compliance requirements such as RoHS and REACH declarations directly with GeneSiC Semiconductor representatives. Ensure that the TO-247-3 mounting torque specifications are strictly adhered to during assembly to maintain thermal performance and mechanical integrity.

Diode Arrays Selection Notes

Select this component for designs requiring high efficiency and reduced cooling requirements due to its superior figure of merit. The positive temperature coefficient facilitates easy paralleling without thermal runaway risks. Consider the 1200V rating and 30A current capacity when sizing components for electric vehicle chargers or solar inverters operating in high-temperature environments.

Diode Arrays Part Context

This part belongs to the GeneSiC SiC Schottky MPS™ diode family, designed for high-performance power conversion. It combines excellent forward characteristics with robust thermal conductivity. The MPS structure offers advantages over standard Schottky diodes, including lower reverse leakage and higher breakdown voltage capability within the same package footprint.

Diode Arrays Replacement Considerations

Direct substitutes include other 1200V 30A TO-247-3 SiC Schottky diodes from manufacturers like Wolfspeed or Onsemi. Verify pinout compatibility and thermal resistance values. Cross-reference electrical parameters such as forward voltage and reverse leakage current to ensure equivalent performance in the target application circuit.

Diode Arrays FAQ

What is the maximum dV/dt rating for the GC2X15MPS12-247?

The device supports a diode ruggedness dV/dt rating of 200 V/ns when tested with a voltage swing from 0 to 960 V.

Does this diode exhibit reverse recovery current?

No, the GC2X15MPS12-247 features zero reverse recovery current, which contributes to its high switching efficiency and low electromagnetic interference.

How does the forward voltage behave with temperature changes?

The device has a positive temperature coefficient for forward voltage, which allows for stable operation and easy paralleling of multiple devices without thermal runaway.