Diode Arrays GD2X150MPS06N product image

GD2X150MPS06N

$54.06
  • Description:DIODE MOD SIC 650V 150A SOT-227
  • Series:SiC Schottky MPS™

SKU:286abc572c2c Category: Brand:

  
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GD2X150MPS06N is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SIC 650V 150A SOT-227. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for GD2X150MPS06N

  • Description:DIODE MOD SIC 650V 150A SOT-227
  • Series:SiC Schottky MPS™
  • Mfr:GeneSiC Semiconductor
  • Package:Tube
  • Diode Configuration:2 Independent
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io) (per Diode):150A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 150 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 650 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for GD2X150MPS06N

GD2X150MPS06N

Diode Arrays Overview

The GD2X150MPS06N is a dual silicon carbide Schottky MPS diode rated at 650 V and 300 A. It utilizes Gen4 Thin Chip Technology to achieve low forward voltage and superior Qrr/IF figure of merit. The device features zero reverse recovery current, temperature-independent fast switching, and high dV/dt ruggedness. Packaged in an SOT-227 screw-mount configuration, it offers low thermal resistance and a positive temperature coefficient for VF, facilitating easy paralleling without thermal runaway.

Diode Arrays Feature Summary

  • Gen4 Thin Chip Technology for low forward voltage
  • Zero reverse recovery current with negligible ringing
  • Temperature-independent fast switching behavior
  • High dV/dt ruggedness and enhanced surge current robustness

Diode Arrays Applications

  • EV Fast Chargers
  • Solar Inverters
  • Switched Mode Power Supply (SMPS)
  • Motor Drives
  • Uninterruptible Power Supply (UPS)

Diode Arrays Procurement Notes

Verify the specific manufacturing lot date code against project requirements, as component specifications may be subject to revision by GeneSiC Semiconductor. Confirm compliance documentation, including RoHS and REACH declarations, directly with the authorized supplier or manufacturer representative prior to final procurement decisions.

Diode Arrays Selection Notes

Select this component for high-frequency power conversion applications requiring minimal switching losses and high reliability. The dual configuration in an SOT-227 package supports efficient system integration. Ensure adequate heatsinking to manage power dissipation within the specified junction temperature range of -55°C to 175°C.

Diode Arrays Part Context

This part belongs to the GeneSiC SiC Schottky MPS series, leveraging advanced silicon carbide substrate technology. GeneSiC Semiconductor was acquired by Navitas Semiconductor, integrating its expertise in wide-bandgap power devices into a broader portfolio focused on EV and industrial infrastructure solutions.

Diode Arrays Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage rating?

The GD2X150MPS06N has a maximum repetitive peak reverse voltage (VRRM) rating of 650 V per leg.

Does this diode exhibit reverse recovery current?

No, the device features zero reverse recovery current due to its Schottky construction, resulting in negligible ringing patterns at turn-off.

What is the operating temperature range?

The operating and storage temperature range is from -55°C to +175°C.

GD2X150MPS06NGD2X150MPS06N
$54.06
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