GE06MPS06Q-TR

$3.20

Description：650V 6A PQFN 8X8 SIC SCHOTTKY MP
Series：-

SKU:995bae0c7d59 Category: RF Diodes Brand: GeneSiC Semiconductor

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Product introduction

GE06MPS06Q-TR is listed in the RF Diode range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 650V 6A PQFN 8X8 SIC SCHOTTKY MP. Review the specifications below when checking this part for your BOM.

RF Diode specifications for GE06MPS06Q-TR

Description：650V 6A PQFN 8X8 SIC SCHOTTKY MP
Series：-
Mfr：GeneSiC Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Type：-
Voltage - Peak Reverse (Max)：-
Current - Max：-
Capacitance @ Vr, F：-
Resistance @ If, F：-
Power Dissipation (Max)：-
Operating Temperature：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

RF Diode datasheet and documents for GE06MPS06Q-TR

GE06MPS06Q-TR

RF Diode Overview

The GE06MPS06Q-TR is a Silicon Carbide Schottky MPS diode manufactured by GeneSiC Semiconductor. It features a single configuration in a PQFN 8x8 surface-mount package. Key electrical parameters include a 650V repetitive reverse voltage, a 1.25V forward voltage, and a 6A forward current. The device supports a 33A forward surge current with a reverse leakage current of 1uA. It operates within a temperature range of -55°C to +175°C.

RF Diode Feature Summary

Utilizes Silicon Carbide Schottky MPS technology for superior switching characteristics
Demonstrates temperature-independent switching behavior across the operating range
Offers high thermal conductivity and robust avalanche capability

RF Diode Applications

Switching Mode Power Supplies (SMPS)
Electric Vehicle (EV) systems
Motor drives
Medical imaging systems

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific datasheet revisions prior to integration. Ensure storage conditions align with semiconductor handling standards to maintain performance integrity during assembly processes.

RF Diode Selection Notes

Select this component for applications requiring high-temperature operation up to 175°C and low forward voltage drop. The PQFN package suits space-constrained surface-mount designs. Evaluate thermal management requirements given the high power density capabilities inherent to Silicon Carbide devices.

RF Diode Part Context

This part belongs to the GeneSiC SiC Schottky MPS series, designed for high-efficiency power conversion. It complements other variants like the GE10MPS06E, offering lower current ratings in a compact QFN footprint suitable for dense PCB layouts.

RF Diode Replacement Considerations

Direct substitutes may include other 650V SiC Schottky diodes in similar packages. Verify pinout compatibility and thermal resistance specifications before swapping components to ensure circuit stability.

Explore related parts through Diodes, Discrete Semiconductor Products, all product categories, ChipApex homepage.

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