GE2X10MPS06D

Diode Arrays Overview

The GE2X10MPS06D is a Silicon Carbide Schottky diode from the MPS Series, manufactured by GeneSiC Semiconductor. It features a dual common cathode configuration housed in a TO-247 package with three pins. The device supports a repetitive peak reverse voltage of 650 V and offers a total capacitive charge of 25 nC. While some sources cite a 46 A rating, official datasheets specify a 20 A current capacity for this specific part number.

Diode Arrays Feature Summary

• Utilizes Silicon Carbide (SiC) material for high-temperature operation
• Employs Multi-Pillar Schottky (MPS) architecture to reduce leakage current
• Dual common cathode design enables efficient bridge rectification

Diode Arrays Applications

• High-frequency power supply rectification
• DC-DC converter output stages
• Uninterruptible Power Supply (UPS) systems

Diode Arrays Procurement Notes

Verify the manufacturer against GeneSiC Semiconductor or authorized distributors. Confirm the package type is TO-247-3. Ensure the part number matches GE2X10MPS06D exactly to avoid confusion with similar MPS series variants that may have different current ratings or pin configurations.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage drop and fast switching speeds at elevated temperatures. The dual common cathode structure is suitable for full-bridge rectifier circuits where space efficiency is critical. Consider thermal management requirements due to the high power density inherent in SiC devices.

Diode Arrays Part Context

This component belongs to the MPS Gen V Series of Silicon Carbide Schottky Diodes. It represents an advancement over standard Schottky diodes by combining the benefits of SiC material with the multi-pillar structure to minimize reverse recovery charge and leakage current, enhancing overall system efficiency.

Diode Arrays Replacement Considerations

Direct substitutes within the same MPS series should be verified for identical voltage ratings and package dimensions. Cross-referencing with other manufacturers' SiC diodes requires careful comparison of forward voltage characteristics and thermal resistance values to ensure circuit compatibility.