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GSD2004S-HE3_A-08 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay. Its product description is DIODE ARR GP 240V 350MA SOT23-3. Review the specifications below when checking this part for your BOM.
The GSD2004S-HE3_A-08 is a dual in-series small signal high voltage switching diode manufactured by Vishay Semiconductors. It utilizes silicon epitaxial planar technology and is housed in an SOT-23 surface-mount package. The component is AEC-Q101 qualified, ensuring compliance with automotive standards. Key electrical specifications include a continuous reverse voltage of 240 V and a peak repetitive reverse voltage of 300 V. It supports a continuous forward current of 350 mA and features a typical reverse recovery time of 50 ns.
Verify the specific ordering suffix to confirm AEC-Q101 qualification status, as non-qualified variants exist within the same family. Ensure the reel size matches production requirements, as the -08 suffix indicates a 3000-unit quantity on a 7-inch reel. Confirm RoHS compliance and material categorization details against project specifications before finalizing procurement.
Select this component when a compact dual-diode solution is required for high-voltage switching tasks. The SOT-23 package offers space efficiency compared to larger discrete packages. Consider the thermal resistance and power dissipation limits relative to the operating ambient temperature. Verify that the 300 V breakdown voltage meets the circuit's peak reverse voltage requirements.
This device belongs to the GSD2004S series of dual in-series small signal high voltage switching diodes. The HE3_A suffix denotes the AEC-Q101 qualified version compliant with automotive standards, while the -08 suffix specifies the tape and reel packaging format containing 3000 units per 7-inch reel.
GSD2004S-E3-08
Yes, the HE3_A suffix indicates that this specific variant is AEC-Q101 qualified, making it suitable for automotive electronics.
The maximum continuous reverse voltage (V_R) is rated at 240 V.
The typical reverse recovery time (t_rr) is 50 ns under specified test conditions.
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