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GSFA2072 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 72.00A, 20. Review the specifications below when checking this part for your BOM.
The GSFA2072 is a 200V N-Channel MOSFET manufactured by Good-Ark Semiconductor, housed in a TO-247 package. It features a maximum drain-source breakdown voltage (BVDSS) of 200V and a continuous drain current (ID) of 46A at TC=25°C. The device exhibits a typical static on-resistance (RDS(ON)) of 19.4mΩ at VGS=10V and ID=46A, with a maximum rating of 24mΩ. Gate threshold voltage ranges from 3.0V to 5.0V. Total gate charge is typically 36nC. The component supports a junction temperature range of -55°C to +150°C and includes an integral body diode with a forward voltage of 1.4V at IS=46A.
Verify the specific ordering suffix and quantity constraints directly with Good-Ark Semiconductor or authorized distributors before placing orders. Confirm that the TO-247 tube packaging aligns with your assembly requirements. Ensure all electrical parameters meet your circuit design specifications, particularly regarding thermal management and voltage ratings.
Select the GSFA2072 when a 200V N-Channel MOSFET with low on-resistance is required for high-current applications. Consider its 46A continuous drain current capability and TO-247 package for adequate heat dissipation. Evaluate the gate charge and threshold voltage against your driver capabilities to ensure optimal switching performance in power supply designs.
Good-Ark Semiconductor specializes in discrete semiconductor devices, including MOSFETs, diodes, and transistors. The company operates a complete industry chain from chip development to packaging. Their product portfolio serves various sectors such as automotive electronics, consumer goods, and industrial control systems, emphasizing high reliability and advanced manufacturing processes.
Consult official manufacturer substitution lists for verified equivalents. Cross-reference key parameters such as BVDSS, RDS(ON), ID, and package type when evaluating alternative components to ensure functional compatibility in existing designs.
The maximum drain-source breakdown voltage (BVDSS) is 200V.
The typical static on-resistance is 19.4mΩ when measured at VGS=10V and ID=46A.
Yes, the device features an integral reverse p-n junction diode with a forward voltage of 1.4V at IS=46A.
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