Single FETs, MOSFETs GSFA2072 product image

GSFA2072

$3.09
  • Description:MOSFET, N-CH, SINGLE, 72.00A, 20
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tube

SKU:870c1d57e64e Category: Brand:

  
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GSFA2072 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 72.00A, 20. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GSFA2072

  • Description:MOSFET, N-CH, SINGLE, 72.00A, 20
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:24mOhm @ 46A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2655 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):250W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for GSFA2072

GSFA2072

Single FETs, MOSFETs Overview

The GSFA2072 is a 200V N-Channel MOSFET manufactured by Good-Ark Semiconductor, housed in a TO-247 package. It features a maximum drain-source breakdown voltage (BVDSS) of 200V and a continuous drain current (ID) of 46A at TC=25°C. The device exhibits a typical static on-resistance (RDS(ON)) of 19.4mΩ at VGS=10V and ID=46A, with a maximum rating of 24mΩ. Gate threshold voltage ranges from 3.0V to 5.0V. Total gate charge is typically 36nC. The component supports a junction temperature range of -55°C to +150°C and includes an integral body diode with a forward voltage of 1.4V at IS=46A.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced MOSFET process technology for high cell density and low on-resistance
  • Optimized for high efficiency switched power supplies due to fast switching and reverse recovery characteristics
  • Features low on-resistance combined with low gate charge for efficient operation

Single FETs, MOSFETs Applications

  • High efficiency switched power supplies
  • General purpose applications requiring robust switching performance

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and quantity constraints directly with Good-Ark Semiconductor or authorized distributors before placing orders. Confirm that the TO-247 tube packaging aligns with your assembly requirements. Ensure all electrical parameters meet your circuit design specifications, particularly regarding thermal management and voltage ratings.

Single FETs, MOSFETs Selection Notes

Select the GSFA2072 when a 200V N-Channel MOSFET with low on-resistance is required for high-current applications. Consider its 46A continuous drain current capability and TO-247 package for adequate heat dissipation. Evaluate the gate charge and threshold voltage against your driver capabilities to ensure optimal switching performance in power supply designs.

Single FETs, MOSFETs Part Context

Good-Ark Semiconductor specializes in discrete semiconductor devices, including MOSFETs, diodes, and transistors. The company operates a complete industry chain from chip development to packaging. Their product portfolio serves various sectors such as automotive electronics, consumer goods, and industrial control systems, emphasizing high reliability and advanced manufacturing processes.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Cross-reference key parameters such as BVDSS, RDS(ON), ID, and package type when evaluating alternative components to ensure functional compatibility in existing designs.

Single FETs, MOSFETs FAQ

What is the maximum drain-source breakdown voltage for the GSFA2072?

The maximum drain-source breakdown voltage (BVDSS) is 200V.

What is the typical static on-resistance (RDS(ON)) of this device?

The typical static on-resistance is 19.4mΩ when measured at VGS=10V and ID=46A.

Does the GSFA2072 include an integral body diode?

Yes, the device features an integral reverse p-n junction diode with a forward voltage of 1.4V at IS=46A.

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