GSFA95R500

$4.52

Description：MOSFET, N-CH, SINGLE, 10.00A, 95
Series：-
Mfr：Good-Ark Semiconductor
Package：Tube

SKU:f514ff6d639c Category: Single FETs, MOSFETs Brand: Good-Ark Semiconductor

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Product introduction

GSFA95R500 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 10.00A, 95. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GSFA95R500

Description：MOSFET, N-CH, SINGLE, 10.00A, 95
Series：-
Mfr：Good-Ark Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：950 V
Current - Continuous Drain (Id) @ 25°C：10A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：500mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1568 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：151W (Tj)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for GSFA95R500

GSFA95R500

Single FETs, MOSFETs Overview

The GSFA95R500 is a 950V N-Channel Power MOSFET manufactured by Good-Ark Semiconductor. It features a maximum drain-source voltage (BVDSS) of 950V and a continuous drain current (ID) of 10A at 25°C case temperature. The device has a maximum on-resistance (RDS(ON)) of 0.50Ω at VGS=10V and ID=5A. It utilizes advanced MOSFET process technology for high cell density, low gate charge, fast switching, and reverse body recovery. The component is housed in a TO-247-J package with dimensions of 21.10mm length, 15.90mm width, and 5.10mm height.

Single FETs, MOSFETs Feature Summary

Advanced MOSFET process technology achieving high cell density and low on-resistance
Fast switching capability combined with low gate charge for efficiency
Reverse body diode designed for fast recovery performance

Single FETs, MOSFETs Applications

High efficiency switched mode power supplies
EV Charger systems
Motor driver circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer datasheet version against the ordered part number to ensure electrical parameters match design requirements. Confirm the TO-247-J package outline dimensions are compatible with the intended PCB footprint and thermal management strategy. Check for any RoHS or environmental compliance certifications required for the target application market.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage rating of 950V is required alongside moderate current handling capabilities. Consider the thermal resistance values and package size for heat dissipation needs in switch-mode applications. Evaluate the gate charge characteristics against the driving circuit's speed requirements to optimize switching losses.

Single FETs, MOSFETs Part Context

This device belongs to the category of high-voltage N-Channel Power MOSFETs designed for power electronics. It is engineered to provide reliability and efficiency in demanding environments. The TO-247-J package offers robust mechanical stability and effective thermal conduction paths for mounting onto heatsinks.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists from Good-Ark Semiconductor for verified equivalents. Ensure any replacement maintains the 950V breakdown voltage and compatible pinout configuration.