Diode Arrays GSMMBD3004A product image

GSMMBD3004A

$0.14
  • Description:DIODE ARRAY GP 350V 225MA SOT23
  • Series:-

SKU:c55ac502b3c9 Category: Brand:

  
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GSMMBD3004A is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is DIODE ARRAY GP 350V 225MA SOT23. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for GSMMBD3004A

  • Description:DIODE ARRAY GP 350V 225MA SOT23
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):350 V
  • Current - Average Rectified (Io) (per Diode):225mA
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):50 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 240 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for GSMMBD3004A

GSMMBD3004A

Diode Arrays Overview

The GSMMBD3004A is a high voltage surface mount switching diode manufactured by Good-Ark Semiconductor. It features a SOT-23 package with a repetitive peak reverse voltage of 350 V and a continuous forward current of 225 mA. The device exhibits a maximum reverse recovery time of 50 ns and a total capacitance of 5.0 pF at 1 MHz. Forward voltage ranges from 0.87 V to 1.25 V depending on current, while reverse current is limited to 100 nA at 240 V. Power dissipation is rated at 350 mW with an operating temperature range of -65 °C to +150 °C.

Diode Arrays Feature Summary

  • Fast switching speed suitable for high-frequency applications
  • High conductance characteristics for efficient signal handling
  • High reverse breakdown voltage rating for robust performance

Diode Arrays Applications

  • Small signal switching circuits
  • Surface mount assembly requiring automatic insertion
  • High voltage rectification tasks

Diode Arrays Procurement Notes

Verify the specific suffix against the manufacturer's official documentation to confirm exact electrical tolerances and marking codes. Ensure the ordering information matches the required tape and reel specifications for automated production lines. Cross-reference the datasheet revision date to validate current parameter limits before finalizing procurement decisions.

Diode Arrays Selection Notes

Select this component when designing circuits that require fast switching capabilities within a compact SOT-23 footprint. Consider the 350 V reverse voltage rating for high-voltage isolation requirements. Evaluate the thermal resistance and power dissipation limits to ensure adequate heat management in the target application environment.

Diode Arrays Part Context

This part belongs to the GSMMBD3004x series of switching diodes produced by Good-Ark Semiconductor. The series includes variants such as GSMMBD3004C and GSMMBD3004S, which share similar physical packaging but may differ in specific electrical parameters or marking codes. These devices are designed for general-purpose high-speed switching applications in consumer and industrial electronics.

Diode Arrays Replacement Considerations

Compatible substitutes include MMBD3004A from Diodes Incorporated and MMBD3004A from Panjit International. Verify pinout compatibility and electrical ratings before substitution.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage for the GSMMBD3004A?

The maximum repetitive peak reverse voltage is 350 V.

What is the typical total capacitance of the device?

The typical total capacitance is 5.0 pF measured at 0 V reverse bias and 1 MHz frequency.

What is the maximum reverse recovery time specified for this diode?

The maximum reverse recovery time is 50 ns.

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