HERF1002G

Diode Arrays Overview

The HERF1002G is a high-efficiency rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a dual-die configuration within an ITO-220AB package, providing a maximum average forward current of 10 A and a repetitive peak reverse voltage of 100 V. The device supports a surge peak forward current of 125 A and operates across a junction temperature range of -55°C to +150°C. Electrical characteristics include a typical forward voltage of 1.0 V at 5 A, a maximum reverse current of 10 µA at rated voltage, and a typical reverse recovery time of 50 ns.

Diode Arrays Feature Summary

• High efficiency with low forward voltage drop for reduced power loss
• High current and surge current capability suitable for demanding loads
• Glass passivated chip junction ensuring reliability and stability
• Compliant with RoHS directives and halogen-free standards

Diode Arrays Applications

• DC to DC converter circuits
• Switching mode converters and inverters
• Freewheeling applications in power supplies

Diode Arrays Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct voltage rating and packaging options. Confirm whether the 'H' suffix is required for AEC-Q101 automotive qualification, as standard versions may differ. Check for compliance with environmental regulations such as RoHS and halogen-free requirements relevant to your manufacturing process. Ensure the ITO-220AB package dimensions match your PCB footprint and mounting torque specifications.

Diode Arrays Selection Notes

Select this component for applications requiring high efficiency and robust surge handling in a through-hole package. The dual-die design offers improved thermal performance compared to single-die alternatives. Consider the 100 V reverse voltage rating for general-purpose rectification where moderate blocking voltage is sufficient. Evaluate the 50 ns reverse recovery time for switching frequencies compatible with fast recovery rectifiers rather than ultra-fast or super-fast variants.

Diode Arrays Part Context

This part belongs to the HERF1001G–HERF1008G series from Taiwan Semiconductor, which covers voltage ratings from 50 V to 1000 V. All members share the same ITO-220AB mechanical case and electrical current ratings, differing primarily in their repetitive peak reverse voltage capabilities. The series is designed for high-efficiency rectification in industrial and consumer power electronics.

Diode Arrays Replacement Considerations

Direct substitutes must match the 10 A current, 100 V reverse voltage, ITO-220AB package, and dual-die configuration. Verify that alternative components meet the same thermal resistance and reverse recovery time specifications to maintain circuit performance.

Diode Arrays FAQ

What is the difference between HERF1002G and HERF1002GH?

The 'H' suffix indicates that the device is qualified under the AEC-Q101 automotive standard, whereas the standard version does not carry this qualification.

Is the HERF1002G halogen-free?

Yes, the HERF1002G is halogen-free according to IEC 61249-2-21 definition.

What is the typical junction-to-case thermal resistance?

The typical junction-to-case thermal resistance is 3 °C/W.