Diode Arrays HERF1005GH product image

HERF1005GH

$1.31
  • Description:DIODE ARRAY GP 400V 10A ITO220AB
  • Series:-

SKU:ba80229545ed Category: Brand:

  
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HERF1005GH is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARRAY GP 400V 10A ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HERF1005GH

  • Description:DIODE ARRAY GP 400V 10A ITO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):50 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 400 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for HERF1005GH

HERF1005GH

Diode Arrays Overview

The HERF1005GH is a dual common cathode fast recovery rectifier diode array manufactured by Taiwan Semiconductor Corporation. It features two silicon elements housed in a TO-220AB (TO-220-3) through-hole package with an isolated cathode connection. The device supports a maximum repetitive peak reverse voltage of 400V and provides a total average forward rectified current of 10A. Key electrical specifications include a typical reverse recovery time of 50ns, a maximum non-repetitive peak surge current of 125A, and a maximum forward voltage of 1.3V at rated conditions.

Diode Arrays Feature Summary

  • High efficiency operation characterized by low forward voltage drop and rapid switching capabilities.
  • Glass passivated junction construction ensuring high reliability and stability under thermal stress.
  • Dual common cathode configuration allowing for efficient circuit design in polarity protection and free-wheeling applications.

Diode Arrays Applications

  • Low voltage, high frequency inverter circuits
  • Free-wheeling diode implementations
  • Polarity protection systems

Diode Arrays Procurement Notes

Verify the specific suffix codes on the component marking to confirm compliance with environmental directives such as RoHS and WEEE. Ensure that the ordering documentation explicitly references the HERF1005GH part number to distinguish it from similar single-element or different voltage variants within the HER series. Confirm package type matches the required TO-220AB footprint for PCB integration.

Diode Arrays Selection Notes

Select this component when a dual-channel solution is required for high-speed rectification tasks. The 50ns reverse recovery time makes it suitable for frequencies where standard rectifiers would exhibit excessive losses. Consider the 10A current rating and 400V blocking capability against peak load requirements. The TO-220AB package facilitates heat dissipation for continuous high-current operations compared to smaller surface-mount alternatives.

Diode Arrays Part Context

This device belongs to the HER series of glass passivated high-efficiency rectifiers produced by Taiwan Semiconductor. The series utilizes advanced silicon planar technology to achieve superior performance metrics compared to older junction types. The HERF1005GH specifically addresses the need for dual configurations in compact power supply designs without compromising switching speed or thermal management.

Diode Arrays Replacement Considerations

Direct substitutes must match the 10A/400V/dual-common-cathode specification and TO-220AB package. Verify equivalent reverse recovery times and forward voltage characteristics to ensure circuit compatibility. Generic replacements may differ in thermal resistance or pinout orientation, requiring schematic review before implementation.

Diode Arrays FAQ

What is the typical reverse recovery time for the HERF1005GH?

The typical reverse recovery time is 50 nanoseconds.

How are the internal diodes configured in this array?

The device contains two elements configured in a common cathode arrangement.

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