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HIP2100IRZT is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 16QFN. Review the specifications below when checking this part for your BOM.
The HIP2100IRZT is a high-frequency, 100V half-bridge N-channel power MOSFET driver IC manufactured by Renesas Electronics Corporation. It features independent control of low-side and high-side gate drivers with matched propagation delays of 8ns, allowing flexible dead-time selection. The device operates with a supply voltage range of 9V to 14V and delivers peak output currents of 2A for both sourcing and sinking. It utilizes a 16-lead MLFP (5x5mm) surface-mount package.
Verify component authenticity through authorized Renesas distributors or certified partners. Confirm RoHS compliance status as historical data indicates non-compliance for specific variants. Check manufacturing date codes against current production lifecycle notices. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering. Validate pin-out compatibility with target PCB footprint specifications.
Select this component when independent half-bridge control with tight delay matching is required. Consider the 100V blocking capability and 2A peak drive strength for medium-power applications. Evaluate the 16-lead MLFP package for space-constrained designs. Compare against legacy SOIC versions if leaded alternatives are preferred for specific assembly processes.
This part belongs to the HIP2100 series of half-bridge drivers, designed for cost-effective high-frequency switching applications. It serves as a direct replacement for older Intersil variants within the same functional family. The MLFP package offers a compact solution compared to traditional wide-body packages while maintaining similar electrical performance characteristics for industrial and consumer power electronics.
HIP2100IBZT is a direct substitute offering identical functionality in an 8-SOIC package.
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