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Product Detailed Parameters
- Description:IC AMP CELL 1.6GHZ-2.2GHZ 16QSOP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Strip
- Frequency:1.6GHz ~ 2.2GHz
- P1dB:27dBm
- Gain:23dB
- Noise Figure:5.5dB
- RF Type:Cellular, PCS
- Voltage - Supply:2.75V ~ 5V
- Current - Supply:220mA
- Test Frequency:-
- Mounting Type:Surface Mount
- Package / Case:16-SSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package:16-QSOP-EP
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Overview
The HMC413QS16GE is a GaAs InGaP HBT MMIC power amplifier designed for cellular and PCS applications. It operates within the frequency range of 1.6 GHz to 2.2 GHz. The device provides a typical gain of 23 dB and delivers an output power (P1dB) of 27 dBm. It functions with supply voltages between 2.75 V and 5 V. Key performance metrics include an input return loss of 10 dB and an output third-order intercept point (OIP3) of 40 dBm at test frequencies of 1.7 GHz to 2 GHz. The component utilizes surface mount technology in a QSOP-16 package.
Feature Summary
- High efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) monolithic microwave integrated circuit construction
- Optimized for narrow band medium power strip applications in cellular and PCS bands
- Designed for surface mount installation to facilitate compact board layouts
Applications
- Cellular base station amplifiers
- PCS system power amplification
- Narrow band RF signal conditioning
Procurement Notes
Verify the specific suffix 'GE' to confirm lead-free RoHS compliance status, as packaging variations may exist. Confirm the QSOP-16 package type matches your PCB footprint requirements. Ensure the operating voltage range of 2.75 V to 5 V aligns with your system design constraints before integration.
Selection Notes
Select this component when a high-efficiency medium-power amplifier is required for the 1.6–2.2 GHz spectrum. The 23 dB gain and 27 dBm P1dB output suit applications needing significant signal boosting without excessive heat dissipation. Consider the 40 dBm OIP3 for linearity requirements in crowded spectral environments.
Part Context
This part belongs to the Analog Devices HMC series of RF power amplifiers. It utilizes GaAs InGaP HBT technology, which offers a balance of high power density and efficiency. The QSOP-16EP package provides thermal stability and ease of automated assembly for mass production environments.
Replacement Considerations
Direct substitutes are not explicitly confirmed in public documentation. Evaluate other HMC series amplifiers with similar frequency ranges and power outputs if pin compatibility is critical.
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