HN1D02F(TE85L,F)

Diode Arrays Overview

The HN1D02F is a dual cathode common ultra high speed switching diode manufactured by Toshiba Semiconductor and Storage. It features a low forward voltage of 0.90 V typical at 100 mA and a fast reverse recovery time of 1.6 ns typical. The device has a maximum reverse voltage rating of 80 V and supports an average forward current of 100 mA with a surge current capability of 2 A. Total capacitance is typically 0.9 pF. It operates within a junction temperature range up to 150 °C and is housed in a compact SOT-25 (SMV) package.

Diode Arrays Feature Summary

• Dual cathode common configuration for efficient circuit design
• Ultra-fast reverse recovery characteristics suitable for high-speed applications
• Low forward voltage drop to minimize power loss
• Minimal total capacitance for reduced signal interference

Diode Arrays Applications

• High-speed switching circuits
• General-purpose rectification
• Clamping and protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, as ratings differ between LF(T) and non-LF variants. Confirm that the selected package matches the required footprint dimensions. Ensure application designs account for derating concepts outlined in the Toshiba Semiconductor Reliability Handbook to maintain long-term operational reliability under varying thermal and electrical loads.

Diode Arrays Selection Notes

Select this component when a dual diode solution with minimal parasitic capacitance is required. The low forward voltage makes it suitable for low-voltage logic interfaces. Verify that the 80 V reverse voltage rating exceeds the peak operating voltage of the target circuit. Consider the 300 mW total power dissipation limit when designing thermal management strategies for densely packed PCB layouts.

Diode Arrays Part Context

This part belongs to Toshiba's ultra high speed switching diode series, designed specifically for applications demanding rapid transition times. The HN1D02F integrates two independent diodes sharing a common cathode within a single surface-mount package. This integration reduces board space compared to discrete components while maintaining consistent electrical performance across both units.

Diode Arrays Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Cross-referencing requires matching the dual cathode common topology, SOT-25 package, and comparable reverse recovery time specifications.