HN1D04FUTE85LF

Description：DIODE ARRAY GP 80V 100MA US6
Series：-

SKU:408c6cda52a1 Category: Diode Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

HN1D04FUTE85LF is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE ARRAY GP 80V 100MA US6. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HN1D04FUTE85LF

Description：DIODE ARRAY GP 80V 100MA US6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：2 Pair Series Connection
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：80 V
Current - Average Rectified (Io) (per Diode)：100mA
Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：1.6 ns
Current - Reverse Leakage @ Vr：500 nA @ 80 V
Operating Temperature - Junction：150°C (Max)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：US6
Grade：-
Qualification：-

Diode Arrays datasheet and documents for HN1D04FUTE85LF

HN1D04FUTE85LF

Diode Arrays Overview

The Toshiba HN1D04FUTE85LF is a silicon epitaxial planar diode array designed for ultra-high-speed switching applications. It integrates four independent diodes within a compact US6 surface-mount package. The device features a low forward voltage of 0.90V typical at 100mA and a fast reverse recovery time of 1.6ns typical. Electrical ratings include an 80V reverse voltage, 100mA average forward current per diode, and a total power dissipation of 200mW. Operating junction temperatures range from -55°C to 150°C.

Diode Arrays Feature Summary

Ultra-high-speed switching capability with minimal reverse recovery time
Low forward voltage drop for improved efficiency
Compact surface-mount packaging suitable for high-density mounting

Diode Arrays Applications

High-frequency rectification circuits
Fast switching power supplies
General-purpose signal processing

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm exact packaging and tape specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the component meets all absolute maximum ratings required by your specific circuit design parameters.

Diode Arrays Selection Notes

Select this component when ultra-fast switching speeds are critical to system performance. Evaluate thermal management requirements carefully due to the 200mW total power dissipation limit across all four diodes. Consider the 80V reverse voltage rating to ensure adequate headroom for transient spikes in the target application environment.

Diode Arrays Part Context

This part belongs to the HN1D04FU series of silicon epitaxial planar diodes manufactured by Toshiba Semiconductor and Storage. The 'TE85LF' suffix indicates specific packaging and lead-free material composition compliant with environmental standards. The device is engineered for reliability in demanding electronic environments requiring rapid response times.

Diode Arrays Replacement Considerations

Consult official Toshiba replacement guides for verified substitutes. Cross-referencing requires matching electrical characteristics such as reverse voltage, forward current, and recovery time. Verify package compatibility and pin assignments before implementation.