HN2S01FUTE85LF

Diode Arrays Overview

The HN2S01FUTE85LF is a silicon epitaxial Schottky barrier diode manufactured by Toshiba Semiconductor and Storage. It integrates three independent diodes within a single package, designed for low voltage high-speed switching applications. The device features a maximum reverse voltage of 10V and an average forward current rating of 100mA per diode. Electrical characteristics include a typical forward voltage of 0.23V at 5mA and a total capacitance of 40pF at 1MHz. The component operates within a temperature range of -40°C to +100°C.

Diode Arrays Feature Summary

• Integrates three independent Schottky barrier diodes in a compact surface-mount package
• Optimized for low voltage high-speed switching applications
• Features low reverse current and low forward voltage characteristics

Diode Arrays Applications

• Low voltage high-speed switching circuits
• General purpose rectification in consumer electronics
• Signal processing applications requiring fast recovery

Diode Arrays Procurement Notes

Verify the specific ordering suffix TE85LF against official Toshiba documentation to confirm packaging details such as reel size or tape width. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure design reviews account for derating concepts outlined in the Toshiba Semiconductor Reliability Handbook when operating near absolute maximum ratings.

Diode Arrays Selection Notes

Select this component for designs requiring multiple independent Schottky diodes in a minimal footprint. Consider the 10V reverse voltage limit and 100mA average forward current per diode when sizing for load requirements. Evaluate the 40pF total capacitance for high-frequency signal integrity. Verify thermal management capabilities given the 200mW power dissipation rating per diode under continuous operation.

Diode Arrays Part Context

This part belongs to the HN2S01FU series of silicon epitaxial Schottky barrier diodes. The series is characterized by its integration of multiple diodes into a single small outline package, facilitating high-density mounting on printed circuit boards. The technology utilizes silicon epitaxial structures to achieve fast switching speeds and low forward voltage drops suitable for modern low-power electronic systems.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult Toshiba sales representatives for cross-reference information or equivalent components meeting identical electrical specifications and package dimensions.