HN2S03T(TE85L)

Diode Arrays Overview

The HN2S03T(TE85L) is a small-signal Schottky barrier diode array manufactured by Toshiba Semiconductor and Storage. It features a dual parallel configuration housed in a compact SMD/SMT package, specifically the TESQ (SOT-553-5) form factor. The device utilizes silicon technology and is designed for low-voltage applications with a maximum repetitive reverse voltage of 20V. Key electrical parameters include a forward current rating of 100 mA and a peak forward surge current capability of 1 A. The component exhibits a typical forward voltage drop of approximately 600 mV and a low reverse leakage current of 5 uA. It supports surface mount installation and operates within a temperature range from -40°C to +100°C, dissipating up to 100 mW of power.

Diode Arrays Feature Summary

• Dual parallel Schottky barrier diode configuration for efficient signal rectification
• Compact surface-mount packaging suitable for high-density PCB layouts
• Low forward voltage drop characteristics for improved energy efficiency
• Silicon-based construction ensuring stable performance under standard operating conditions

Diode Arrays Applications

• General-purpose signal rectification in consumer electronics
• Protection circuits in portable devices requiring low voltage handling
• DC-DC converter input/output stages in compact power supplies
• Logic level clamping and switching applications in digital circuits

Diode Arrays Procurement Notes

Verify the complete part number including the TE85L suffix to ensure correct tape-and-reel packaging specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the datasheet revision date to validate parameter accuracy against current production standards. Ensure storage conditions align with semiconductor moisture sensitivity levels to prevent package damage during assembly.

Diode Arrays Selection Notes

Select this component when a dual-channel Schottky solution is required in a minimal footprint. The 20V rating makes it suitable for low-voltage logic interfaces rather than high-power mains applications. Compare thermal dissipation capabilities against circuit load requirements to avoid overheating. Consider the specific forward voltage characteristics relative to system efficiency targets and signal integrity needs.

Diode Arrays Part Context

This device belongs to Toshiba's HN2S series of small-signal Schottky diodes, which are optimized for modern electronic equipment requiring miniaturization. The TESQ package variant provides enhanced thermal performance compared to standard SOT-363 alternatives while maintaining similar pin compatibility. It serves as a discrete alternative to integrated diode arrays in cost-sensitive designs.

Diode Arrays Replacement Considerations

Direct substitutes may include other dual Schottky diodes in SOT-553 packages with matching 20V ratings. Verify pinout compatibility and forward voltage tolerances before substitution. Alternative manufacturers offering similar configurations should be evaluated for thermal resistance equivalence.