HSMP-4820-TR1G

RF Diode Overview

The HSMP-4820-TR1G is a surface mount RF PIN diode from the Broadcom HSMP-482x series, housed in an SOT-323 package. It features a dual anode configuration optimized for low-inductance switching and power limiting applications up to 1.5 GHz. Key electrical specifications include a breakdown voltage of 50 V, a maximum series resistance of 0.6 Ω, and total capacitance values of 0.75 pF (maximum) and 1.2 pF (typical). The device operates within a junction temperature range of -65°C to 150°C and supports a peak inverse voltage of 50 V.

RF Diode Feature Summary

• Dual anode structure designed for high-isolation SPDT switching and power limiting
• Low inductance construction suitable for high-frequency applications up to 1.5 GHz
• Optimized for ultra-low resistance switching and low distortion attenuation
• Lead-free composition with low failure in time (FIT) rate

RF Diode Applications

• High isolation Single-Pole Double-Throw (SPDT) switches using dual bias
• Power limiting and circuit protection in RF front ends
• Low inductance switching in microwave and millimeter-wave circuits
• Attenuating applications requiring low distortion

RF Diode Procurement Notes

Verify the ordering suffix TR1G corresponds to tape and reel packaging containing 3,000 devices per 7-inch reel. Confirm the component is sourced from Avago Technologies or its successor entity, as Broadcom acquired these assets. Ensure the part number matches the specific dual anode configuration required for your design.

RF Diode Selection Notes

Select this component when low parasitic inductance is critical for performance above 500 MHz. The dual anode configuration allows for flexible biasing schemes to achieve high isolation. Compare series resistance and capacitance values against system requirements to ensure adequate signal integrity and switching speed.

RF Diode Part Context

This component belongs to the HSMP-382x/482x family of surface mount RF PIN diodes. While the HSMP-382x series focuses on single diode configurations, the HSMP-482x series provides dual anode options specifically engineered for low inductance. These devices are commonly used in telecommunications infrastructure and test equipment requiring reliable RF switching.

RF Diode Replacement Considerations

Direct substitutes include other HSMP-482x variants such as HSMP-482B, which shares the dual anode configuration but may differ in marking codes. Verify pinout compatibility and electrical parameters before substitution.

RF Diode FAQ

What is the maximum operating frequency for the HSMP-4820?

The HSMP-4820 is ideal for limiting and low inductance switching applications up to 1.5 GHz.

How does the dual anode configuration benefit circuit design?

The dual anode structure enables high-isolation SPDT switching using dual bias schemes and allows for flexible connection topologies in co-planar waveguide or microstrip layouts.

What is the typical total capacitance at 1 MHz?

The typical total capacitance is 1.2 pF at 1 MHz, with a maximum specified value of 0.75 pF under certain test conditions.