HSMS-280B-TR2G

RF Diode Overview

The HSMS-280B-TR2G is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited. It features a single diode configuration housed in an SOT-23 package with lead code B. The device is optimized for high voltage applications, offering a minimum breakdown voltage of 70 V and a maximum forward voltage of 410 mV at 1 mA. Electrical specifications include a maximum reverse leakage current of 200 nA at 50 V and a typical dynamic resistance of 35 Ω at 5 mA. The component supports a junction temperature up to 150°C and operates within a storage temperature range of -65°C to 150°C.

RF Diode Feature Summary

• High breakdown voltage optimization for demanding circuit environments
• Six-sigma quality level ensuring reliability and low failure rates
• Lead-free construction compliant with environmental standards

RF Diode Applications

• Analog signal processing circuits
• Digital switching applications
• RF mixing and detection stages

RF Diode Procurement Notes

Verify the specific ordering suffix TR2G corresponds to the required 10000-unit tape and reel packaging format. Confirm that the SOT-23 package marking code A0 matches the design requirements. Ensure compatibility with lead-free assembly profiles as defined in the datasheet thermal guidelines.

RF Diode Selection Notes

Select this component when high reverse breakdown voltage is critical compared to lower voltage alternatives like the HSMS-282x series. Consider the higher series resistance inherent to the HSMS-280x family against performance needs. Verify that the single diode configuration meets the schematic topology without requiring complex quad or pair matching.

RF Diode Part Context

This part belongs to the HSMS-280x family of surface mount RF Schottky barrier diodes. The family utilizes identical diode chips across various configurations including singles, pairs, and quads. Manufacturing techniques ensure adjacent dice are matched for high precision in paired or quad arrangements.

RF Diode Replacement Considerations

HSMS-280B-BLKG (Bulk packaging variant)

RF Diode FAQ

What is the maximum junction temperature for the HSMS-280B?

The maximum junction temperature is 150°C.

How is the capacitance of this single diode measured?

Total capacitance is measured at 0 V reverse bias with a 20 mV RMS signal at 1 MHz, resulting in a maximum value of 2.0 pF.

Does the HSMS-280B require special handling for static discharge?

Yes, ESD warnings indicate that handling precautions should be taken to avoid static discharge damage.