RF Diode HSMS-282E-BLKG product image

HSMS-282E-BLKG

  • Description:RF DIODE SCHOTTKY 15V SOT-323
  • Series:-

SKU:677595adc38e Category: Brand:

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HSMS-282E-BLKG is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 15V SOT-323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMS-282E-BLKG

  • Description:RF DIODE SCHOTTKY 15V SOT-323
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Bulk
  • Diode Type:Schottky - 1 Pair Common Anode
  • Voltage - Peak Reverse (Max):15V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:12Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

RF Diode datasheet and documents for HSMS-282E-BLKG

HSMS-282E-BLKG

RF Diode Overview

The HSMS-282E-BLKG is a surface-mount RF Schottky barrier diode manufactured by Broadcom Limited, belonging to the HSMS-282x series. It features a dual common anode configuration housed in a SOT-323-3 package. The device utilizes silicon technology and supports a maximum repetitive reverse voltage of 15 V with a forward current rating of 1 A. Key electrical specifications include a typical forward voltage of 340 mV at 0.5 mA, a leakage current of 100 nA at 10 V, and a capacitance of 1 pF at 0 V. It operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

  • Low turn-on voltage for efficient signal detection
  • Matched diodes for consistent performance in pairs
  • Six-sigma quality level ensuring reliability

RF Diode Applications

  • Mixing applications up to 6 GHz
  • Detecting circuits including small and large signal detectors
  • Switching and sampling operations
  • Clamping and wave shaping functions

RF Diode Procurement Notes

Verify component authenticity through authorized channels as this part may be subject to obsolescence notices. Confirm that the specific ordering suffix matches the required package and configuration. Check for recent Product Change Notifications regarding manufacturing site or material changes before finalizing procurement plans.

RF Diode Selection Notes

Select this component when a dual common anode configuration is required within a compact SOT-323 footprint. Ensure the 15 V breakdown voltage meets circuit requirements. Consider thermal resistance characteristics if high power dissipation is expected in the design environment.

RF Diode Part Context

This component is part of the HSMS-282x family of surface mount RF Schottky barrier diodes originally developed by Agilent Technologies. The series provides various package configurations and internal diode arrangements to offer designers flexibility for analog and digital RF applications.

RF Diode Replacement Considerations

Consult official datasheets for direct pin-compatible substitutes within the HSMS-282x family. Verify that alternative parts maintain identical package dimensions and electrical parameters such as forward voltage and capacitance.

HSMS-282E-BLKGHSMS-282E-BLKG

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