HSMS-282Z-TR1G

RF Diode Overview

The Broadcom HSMS-282Z-TR1G is a surface-mount RF Schottky barrier diode housed in an SOD-323 package. It features low series resistance and low forward voltage at all current levels, making it suitable for analog and digital applications. Key electrical specifications include a peak inverse voltage of 15V, a maximum forward voltage of 340mV at 1mA, and a typical dynamic resistance of 12 Ohms at 5mA. The device has a minimum breakdown voltage of 15V, a maximum reverse leakage current of 100nA at 1V, and a capacitance of 1.0pF at 0V. It operates within a junction temperature range up to 150°C.

RF Diode Feature Summary

• Low turn-on voltage and low series resistance for efficient signal processing
• Microwave frequency operation capability with good RF characteristics
• Industrial standard SOD-323 surface mount package for space-constrained designs

RF Diode Applications

• Mixing circuits
• Signal detection
• Switching applications
• Sampling systems
• Clamping and wave shaping

RF Diode Procurement Notes

Verify the specific ordering suffix TR1G corresponds to the 3000-unit tape and reel configuration on a 7-inch reel as documented in the official datasheet. Confirm that the component meets MSL1 moisture sensitivity level requirements and lead-free standards before finalizing procurement orders to ensure compliance with assembly processes.

RF Diode Selection Notes

Select this component when a compact SOD-323 footprint is required instead of larger SOT-23 or SOT-323 packages. It is appropriate for designs needing low forward voltage and low series resistance for general-purpose RF mixing, detecting, and switching tasks. Ensure the 15V peak inverse voltage rating aligns with the circuit's maximum reverse voltage conditions.

RF Diode Part Context

The HSMS-282Z belongs to the broader HSMS-282x family of RF Schottky barrier diodes manufactured by Broadcom (formerly Avago Technologies). This series provides designers with various specifications and package configurations to accommodate different design flexibility needs. The HSMS-282Z specifically targets applications requiring a smaller package outline while maintaining the performance characteristics associated with the series.

RF Diode Replacement Considerations

Cross-reference with other HSMS-282x variants such as HSMS-2822 or HSMS-2829 if pin compatibility and similar electrical parameters are required. Verify that any substitute part maintains the SOD-323 package dimensions and matches the 15V PIV rating to ensure functional equivalence in existing layouts.

RF Diode FAQ

What is the typical dynamic resistance of the HSMS-282Z?

The typical dynamic resistance is 12 Ohms when measured at a forward current of 5mA.

Does the HSMS-282Z support microwave frequency operations?

Yes, the datasheet explicitly lists microwave frequency operation as a key feature of this diode.

What is the maximum forward current rating for pulse operation?

The absolute maximum rating for forward current during a 1 µs pulse is 1 Ampere.