HSMS-2860-BLKG

RF Diode Overview

The HSMS-2860-BLKG is a single silicon Schottky detector diode in an SOT-323 package. It operates from 915 MHz to 5.8 GHz with a typical forward voltage of 250 mV (max 350 mV) at 1.0 mA and capacitance of 0.30 pF at 0 V. Peak inverse voltage is 4.0 V, with a junction temperature rating of 150 °C and operating range of -65 °C to +150 °C.

RF Diode Feature Summary

• Optimized for RF/ID and RFID tag applications
• High detection sensitivity across UHF to C band frequencies
• Matched diodes ensure consistent performance

RF Diode Applications

• RF/ID and RF Tag systems
• Large signal detection
• Modulation circuits
• RF to DC conversion
• Voltage doubling

RF Diode Procurement Notes

Verify the specific suffix against official documentation to confirm package type and lead configuration. Confirm availability status as distribution channels may vary. Ensure compliance with RoHS requirements if applicable to the design constraints.

RF Diode Selection Notes

Select this component for low-cost, high-volume designs requiring detection above 4 GHz. Consider thermal resistance values when designing for higher power dissipation scenarios. Evaluate bias current requirements to optimize video impedance and sensitivity.

RF Diode Part Context

This part belongs to the HSMS-286x family of surface mount microwave Schottky detector diodes. The series offers various package configurations including SOT-23, SOT-143, SOT-323, and SOT-363 to provide design flexibility for different board space and cost constraints.

RF Diode Replacement Considerations

Consult the manufacturer datasheet for direct pin-compatible substitutes within the HSMS-286x family. Verify electrical parameters such as forward voltage and capacitance before substituting with other Schottky detector diodes.