HSMS-286B-TR1

RF Diode Overview

The HSMS-286B-TR1 is a surface-mount Schottky RF detector diode manufactured by Broadcom Limited. It features a single-diode configuration within an SOT-323-3 package. The device has a peak reverse repetitive voltage of 4V and a maximum forward voltage drop of 350mV. Its junction capacitance is specified at 0.3pF. The component operates within a temperature range from -65°C to +150°C TJ.

RF Diode Feature Summary

• Schottky barrier technology for low noise detection
• Single isolated diode structure
• Compact SMD form factor

RF Diode Applications

• RF signal detection in communication systems
• Envelope detection circuits
• Low-level RF power measurement

RF Diode Procurement Notes

Verify the exact suffix against official documentation, as TR1G denotes tape and reel packaging while BLKG indicates bulk. Confirm RoHS compliance status through current datasheets. Check for End-of-Life notifications or Product Change Notices prior to procurement decisions.

RF Diode Selection Notes

Select this component when a single Schottky detector with 4V reverse voltage rating is required. Ensure the SOT-323-3 footprint matches the PCB layout. Verify that the 0.3pF capacitance meets the high-frequency requirements of the specific application circuit design.

RF Diode Part Context

This part belongs to the Broadcom HSMS series of Schottky diodes designed for RF applications. It shares the core semiconductor technology with other variants like the HSMS-286K but differs in packaging and specific electrical tolerances defined by the manufacturer's product line specifications.

RF Diode Replacement Considerations

Publicly confirmed substitutes include HSMS-286B-BLKG for bulk packaging equivalence. Other family members such as HSMS-286K-TR1G may serve as functional alternatives if pin compatibility and package dimensions are verified against the original design constraints.