HSMS-286P-BLKG

RF Diode Overview

The HSMS-286P-BLKG is a surface mount microwave Schottky detector diode from the HSMS-286x family, manufactured by Broadcom Limited. It features a Quad Bridge configuration housed in a SOT-363 package with six leads. The device operates within a frequency range of 915 MHz to 5.8 GHz and is designed for RF/ID, RFID tag applications, large signal detection, modulation, RF to DC conversion, and voltage doubling. Key electrical specifications include a typical forward voltage of 250 mV (minimum) to 350 mV (maximum) at 1.0 mA, a typical capacitance of 0.25 pF at 0 V and 1 MHz, and a peak inverse voltage of 4.0 V. The junction temperature rating is 150 °C, with an operating temperature range of -65 °C to +150 °C.

RF Diode Feature Summary

• Quad Bridge Configuration: Integrates four matched diodes in a single surface mount package to facilitate differential voltage doubler circuits and high-isolation applications.
• High Detection Sensitivity: Optimized for low-cost, high-volume designs with sensitivity up to 50 mV/µW at 915 MHz, supporting efficient RF to DC conversion.
• Enhanced Thermal Conductivity: Utilizes a copper leadframe in the SOT-363 package, offering superior heat dissipation compared to alloy leadframes.

RF Diode Applications

• RFID Tag Power Harvesting
• Differential Voltage Doubler Circuits
• Large Signal Detection

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific obsolescence notifications or product change notices prior to finalizing procurement plans.

RF Diode Selection Notes

Select this component when a quad bridge topology is required for balanced detection or voltage doubling. Ensure the design accommodates the SOT-363 footprint and utilizes the matched diode characteristics inherent to the wafer-adjacent manufacturing process.

RF Diode Part Context

This part belongs to the HSMS-286x series of surface mount microwave Schottky detector diodes. The 'P' suffix specifically denotes the Quad Bridge configuration within the SOT-363 package, distinguishing it from single, pair, or ring configurations available in the same family.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.

RF Diode FAQ

What is the primary advantage of using the HSMS-286P over discrete diodes?

The HSMS-286P integrates four matched diodes taken from adjacent sites on the wafer, ensuring consistent performance and eliminating the need for external matching in bridge or differential circuits.

How does the HSMS-286P support voltage doubling applications?

Its Quad Bridge configuration allows all four diodes to be utilized in a differential voltage doubler circuit, effectively doubling the output voltage for a given input power while maintaining impedance matching.