HUF76107D3ST

$0.34

Description：N-CHANNEL POWER MOSFET
Series：UltraFET™
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:b2652949f67d Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

HUF76107D3ST is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF76107D3ST

Description：N-CHANNEL POWER MOSFET
Series：UltraFET™
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：52mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：315 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for HUF76107D3ST

HUF76107D3ST

Single FETs, MOSFETs Overview

The HUF76107D3ST is a single N-channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It utilizes UltraFET technology to achieve low on-resistance and fast switching speeds. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 20 A. Key electrical parameters include a maximum gate-source voltage of ±20 V, a typical on-resistance of 52 mΩ, and a power dissipation rating of 35 W. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Single N-channel configuration with enhancement mode operation
UltraFET technology for optimized performance
Logic level gate drive capability

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor control applications
Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation as the part number appears in records associated with both Fairchild Semiconductor and onsemi due to corporate acquisitions. Confirm RoHS compliance status directly with the supplier, as documentation indicates potential variations. Ensure the DPAK-3 (TO-252-3) package matches your PCB footprint requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with high current handling is required. The 52 mΩ on-resistance makes it suitable for low-voltage, high-current applications. Verify that the thermal design accommodates the 35 W power dissipation limit under expected operating conditions. Consider the TO-252-3 package constraints for heat sinking and board layout.

Single FETs, MOSFETs Part Context

This part belongs to the UltraFET family of power MOSFETs, designed for efficient power switching. The 'D3S' suffix typically denotes the DPAK-3 surface-mount package. Fairchild Semiconductor was acquired by onsemi, which may affect long-term supply chain availability and documentation hosting.