HUF76419S3S

Single FETs, MOSFETs Overview

The HUF76419S3S is a single N-Channel Logic Level UltraFET Power MOSFET manufactured by Fairchild Semiconductor. It features a TO-263AB (D2PAK) surface-mount package with a drain-connected flange for thermal management. The device provides a drain-to-source voltage rating of 60V and supports continuous drain currents up to 29A at VGS=10V or 18A at VGS=4.5V. Key electrical characteristics include a maximum on-resistance of 0.040Ω at VGS=5V and 0.035Ω at VGS=10V. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Logic level gate drive capability enabling direct control from standard logic voltages such as 4.5V and 5V.
• Ultra-low on-resistance design optimized for high efficiency in power switching applications.
• Robust avalanche energy handling capabilities defined by unclamped inductive switching ratings.
• Integrated body diode with specified reverse recovery characteristics for synchronous rectification.

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring low profile surface mount packaging.
• Motor driver stages utilizing logic-level gate signals.
• High-side or low-side switching in power supply architectures.

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing; the base part number HUF76419S3S denotes the through-hole compatible leaded variant, while the 'T' suffix indicates tape and reel packaging. Confirm manufacturer lineage as Fairchild Semiconductor products are now managed by onsemi. Ensure component authenticity through authorized distribution channels to avoid counterfeit risks associated with legacy semiconductor parts.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a balance between low conduction losses and compact surface-mount form factors. The TO-263AB package facilitates effective heat dissipation via the exposed drain pad. Consider the gate charge specifications and threshold voltage variations when designing gate drive circuits to ensure reliable switching performance across the full operating temperature range.

Single FETs, MOSFETs Part Context

This device belongs to the UltraFET series of power MOSFETs, characterized by advanced trench technology for reduced on-resistance. The HUF76419S3S shares functional similarities with other members of the HUF764xx family but is distinct in its specific current and resistance parameters. It represents a legacy product line originally developed by Fairchild Semiconductor before corporate restructuring.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible substitutes may include other 60V N-Channel MOSFETs in the TO-263AB package with comparable RDS(ON) and current ratings. Verify that any replacement maintains equivalent thermal resistance and gate charge characteristics to preserve existing circuit timing and thermal management designs.