Single FETs, MOSFETs IAUMN10S5N016GAUMA1 product image

IAUMN10S5N016GAUMA1

$4.06
  • Description:MOSFET_(75V 120V(
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e0733f433f9e Category: Brand:

  
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IAUMN10S5N016GAUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_(75V 120V(. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IAUMN10S5N016GAUMA1

  • Description:MOSFET_(75V 120V(
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:220A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:1.6mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:3.8V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:13570 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):325W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-HSOG-4-1
  • Package / Case:4-PowerSFN

Single FETs, MOSFETs datasheet and documents for IAUMN10S5N016GAUMA1

IAUMN10S5N016GAUMA1

Single FETs, MOSFETs Overview

The IAUMN10S5N016GAUMA1 is an OptiMOS™ 5 automotive power MOSFET featuring a single N-channel enhancement mode configuration. It provides a drain-source breakdown voltage of 100 V and a maximum on-state resistance of 1.6 mΩ at VGS=10V. The device supports a continuous chip-limited drain current of 310 A and a pulsed current of 1100 A. Total gate charge is specified at 142 nC, with turn-on delay time at 25 ns and fall time at 50 ns. Operating temperature ranges from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • Optimized for automotive applications with extended qualification beyond AEC-Q101 standards
  • Robust design validated through 100% avalanche testing
  • Capable of withstanding MSL2 up to 260°C peak reflow temperatures

Single FETs, MOSFETs Applications

  • General automotive applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'AUMA1' against official Infineon documentation to confirm exact packaging or marking variations. Ensure compliance with RoHS requirements and confirm moisture sensitivity level (MSL2) handling procedures during assembly. Validate that the PG-HSOG-4-1 footprint matches the target PCB design constraints.

Single FETs, MOSFETs Selection Notes

Select this component when high current capacity and low conduction losses are required in space-constrained automotive environments. The 1.6 mΩ RDS(on) minimizes thermal generation under heavy loads. Verify system compatibility with the ±20 V gate-source voltage limits and ensure adequate heat dissipation for the 325 W power dissipation rating.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 5 family of power transistors designed specifically for demanding automotive electrical systems. It utilizes advanced trench technology to achieve superior performance metrics compared to previous generations. The device integrates robust protection features suitable for harsh automotive electrical environments.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may not match the specific automotive qualification or package dimensions.

IAUMN10S5N016GAUMA1IAUMN10S5N016GAUMA1
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