IDK09G65C5XTMA2

Single Diodes Overview

The IDK09G65C5XTMA2 is a Silicon Carbide Schottky diode from Infineon Technologies, part of the 5th Generation thinQ! family. It features a PG-TO263-2 package with a maximum repetitive peak reverse voltage (VRRM) of 650 V and a continuous forward current (IF) of 9 A at TC < 145°C. The device exhibits a typical forward voltage (VF) of 1.5 V at IF = 9 A and Tj = 25°C. Key electrical parameters include a total capacitive charge (QC) of 14 nC at VR = 400 V and a power dissipation (Ptot) of 82 W at TC = 25°C. Operating temperatures range from -55°C to +175°C.

Single Diodes Feature Summary

• Utilizes Silicon Carbide semiconductor material for benchmark switching behavior
• Exhibits no reverse recovery or forward recovery characteristics
• Features temperature independent switching behavior
• Supports high surge current capability

Single Diodes Applications

• Switch mode power supply
• Power factor correction
• Solar inverter
• Uninterruptible power supply

Single Diodes Procurement Notes

Verify the specific ordering suffix XTMA2 against official Infineon documentation to confirm reel packaging specifications. Ensure that thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions. Confirm compliance with RoHS standards and JEDEC qualification requirements relevant to the target application environment before finalizing procurement.

Single Diodes Selection Notes

Select this component for applications requiring high-frequency operation and reduced cooling system size due to improved efficiency over silicon diodes. Consider the 650 V blocking voltage and 9 A current rating when designing circuits within this voltage range. Evaluate the low figure of merit resulting from optimized Qc and Vf values for enhanced performance across various load conditions.

Single Diodes Part Context

This component belongs to Infineon's 5th Generation thinQ! SiC Schottky Diode series. It utilizes proprietary diffusion soldering processes combined with thin-wafer technology to achieve improved thermal characteristics. The product line is designed to complement 650 V CoolMOS families, ensuring suitability for stringent application requirements in the same voltage range.

Single Diodes Replacement Considerations

Cross-reference with other Infineon 5th Generation thinQ! SiC Schottky diodes sharing the PG-TO263-2 package and similar 650 V ratings. Verify pin definitions and thermal resistance specifications to ensure compatibility during substitution.