IDT71P72804S167BQ

Memory IC Overview

The IDT71P72804S167BQ is an 18Mb QDR II SRAM featuring independent, double-data-rate read and write data ports. It supports concurrent transactions with a burst of two words per access. The device utilizes a DDR multiplexed address bus and provides four word transfers per clock cycle for quad-data-rate performance. It operates on a 1.8V core voltage with scalable HSTL I/O interfaces ranging from 1.4V to 1.9V. The component is available in a 165-ball fBGA package.

Memory IC Feature Summary

• Independent read and write data ports enable simultaneous access and concurrent transactions.
• Dual echo clock outputs provide precise timing alignment with synchronous data outputs.
• Programmable output impedance allows tuning for low noise and high performance across various loads.
• Integrated JTAG interface supports connectivity testing and system diagnostics.

Memory IC Applications

• High-speed networking equipment
• Telecommunications infrastructure
• Data communication systems

Memory IC Procurement Notes

Verify the specific speed grade and temperature range required for your application against the datasheet specifications. Confirm that the 165-ball fBGA package dimensions match your PCB footprint. Ensure proper termination resistors are used for the ZQ pin to maintain correct output impedance matching. Check for any RoHS compliance status updates as this component may have been discontinued or subject to product change notices.

Memory IC Selection Notes

Select this component when high throughput and low latency are critical requirements. The independent ports simplify system design by eliminating bidirectional buses. Consider the scalable I/O voltage range if interfacing with different logic levels. Ensure the system can support the required clock frequencies and power supply stability for DLL operation.

Memory IC Part Context

This part belongs to the QDR II SRAM family developed by Integrated Device Technology, now part of Renesas Electronics. These devices are designed for applications requiring maximum bandwidth and deterministic latency. The QDR technology offers significant performance advantages over standard SRAMs by allowing simultaneous read and write operations without bus contention.

Memory IC Replacement Considerations

IDT71P72804S167BQ

Memory IC FAQ

How does the QDR II architecture improve performance compared to standard SRAM?

The QDR II architecture uses independent read and write ports, allowing simultaneous access. This eliminates the need for bidirectional buses and enables four word transfers per clock cycle, significantly increasing throughput compared to single data rate devices.

What is the function of the ZQ pin?

The ZQ pin is used for output impedance matching. An external resistor connected between ZQ and ground sets the drive strength of the output drivers, allowing the device to adapt to system transmission lines and reduce signal reflections.