Memory IC IDT71P74604S250BQ product image

IDT71P74604S250BQ

  • Description:IC SRAM 18MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:49e5bc2bc059 Category: Brand:

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IDT71P74604S250BQ is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 18MBIT PARALLEL 165CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IDT71P74604S250BQ

  • Description:IC SRAM 18MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:250 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:8.4 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IDT71P74604S250BQ

IDT71P74604S250BQ

Memory IC Overview

The IDT71P74604S250BQ is an 18Mb QDR II SRAM with a 512K x 36 organization. It features independent, double-data-rate read and write data ports for simultaneous access. The device utilizes a multiplexed address bus and supports four-word bursts per clock cycle. It operates at clock frequencies up to 250MHz with a core voltage of 1.8V (1.7V to 1.9V) and I/O supply from 1.4V to 1.9V. The component is housed in a 165-ball CABGA package measuring 13mm by 15mm.

Memory IC Feature Summary

  • Independent read and write data ports enable concurrent transactions without bidirectional buses.
  • Quad-data-rate performance achieved through four-word burst transfers on all accesses.
  • Dual echo clock outputs provide precise timing correlation with data output signals.
  • Scalable output impedance allows tuning for low noise and high-performance signal integrity.

Memory IC Applications

  • High-speed networking equipment requiring parallel interface memory
  • Telecommunications systems utilizing synchronous memory architectures
  • Data routing applications demanding maximum device throughput

Memory IC Procurement Notes

Verify the specific suffix 'S250BQ' against official Renesas documentation to confirm speed grade and package variations. Confirm RoHS compliance status as historical records indicate non-compliance for some variants. Validate that the 165-CABGA footprint matches the design requirements. Ensure the commercial temperature range aligns with system constraints.

Memory IC Selection Notes

Select this component when system architecture requires separate read and write paths to maximize bandwidth. Consider the 512K x 36 organization for wide data bus applications. Evaluate the need for echo clocks to simplify downstream clocking. Assess if the 1.8V core and scalable I/O voltage levels match the target system power rails.

Memory IC Part Context

This part belongs to the IDT71P74 family of QDR II SRAMs developed by Integrated Device Technology, now part of Renesas Electronics. The family includes variants like the IDT71P74804 which shares similar architectural features but differs in bit-width organization. These devices represent a specialized class of synchronous memory designed for high-throughput data processing.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing board layouts and signal integrity requirements before considering alternative sources or pin-compatible upgrades.

IDT71P74604S250BQIDT71P74604S250BQ

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