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IDT71P74604S250BQ is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 18MBIT PARALLEL 165CABGA. Review the specifications below when checking this part for your BOM.
The IDT71P74604S250BQ is an 18Mb QDR II SRAM with a 512K x 36 organization. It features independent, double-data-rate read and write data ports for simultaneous access. The device utilizes a multiplexed address bus and supports four-word bursts per clock cycle. It operates at clock frequencies up to 250MHz with a core voltage of 1.8V (1.7V to 1.9V) and I/O supply from 1.4V to 1.9V. The component is housed in a 165-ball CABGA package measuring 13mm by 15mm.
Verify the specific suffix 'S250BQ' against official Renesas documentation to confirm speed grade and package variations. Confirm RoHS compliance status as historical records indicate non-compliance for some variants. Validate that the 165-CABGA footprint matches the design requirements. Ensure the commercial temperature range aligns with system constraints.
Select this component when system architecture requires separate read and write paths to maximize bandwidth. Consider the 512K x 36 organization for wide data bus applications. Evaluate the need for echo clocks to simplify downstream clocking. Assess if the 1.8V core and scalable I/O voltage levels match the target system power rails.
This part belongs to the IDT71P74 family of QDR II SRAMs developed by Integrated Device Technology, now part of Renesas Electronics. The family includes variants like the IDT71P74804 which shares similar architectural features but differs in bit-width organization. These devices represent a specialized class of synchronous memory designed for high-throughput data processing.
Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing board layouts and signal integrity requirements before considering alternative sources or pin-compatible upgrades.
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