IDW30S120FKSA1

Diode Arrays Overview

The IDW30S120FKSA1 is a silicon carbide (SiC) MOSFET manufactured by Infineon Technologies. It features a 1200 V drain-source voltage rating and a continuous drain current of 30 A at 25°C. The device has a maximum on-state resistance of 40 mΩ at 25°C, increasing to 68 mΩ at 175°C. It utilizes an industry-standard TO-247-3 package with a solderable tab for thermal management. The component operates within a junction temperature range of -40°C to +175°C.

Diode Arrays Feature Summary

• Utilizes Silicon Carbide (SiC) technology for high-temperature operation
• Features low on-state resistance for efficient power switching
• Includes an integrated body diode for inductive load handling

Diode Arrays Applications

• High-frequency DC-DC converters
• Motor drive inverters
• Industrial power supplies

Diode Arrays Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status and ensure the supplier provides valid traceability data for the manufacturing lot.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high efficiency at elevated temperatures. Ensure the gate driver can support the required threshold voltage and that the PCB layout accommodates the thermal requirements of the TO-247-3 package.

Diode Arrays Part Context

This part belongs to Infineon's CoolSiC MOSFET family, designed for next-generation power electronics. It replaces older silicon-based solutions in applications demanding higher switching frequencies and reduced system size.

Diode Arrays Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Do not assume pin-compatible alternatives from other manufacturers without verifying electrical parameters and thermal characteristics.