IDW32G65C5BXKSA1

Diode Arrays Overview

The IDW32G65C5BXKSA1 is a silicon carbide Schottky diode from Infineon's 5th Generation thinQ! family. It features a PG-TO247-3 package with a 650 V DC blocking voltage and a continuous forward current of 16 A per leg at TC < 120°C. The device exhibits a typical forward voltage of 1.5 V at 16 A and 25°C, with a total capacitive charge of 46 nC (2 x 23 nC) at VR=400V. It supports a surge non-repetitive forward current of 95 A at 25°C and operates within a junction temperature range of -55°C to 175°C.

Diode Arrays Feature Summary

• Utilizes silicon carbide material for benchmark switching behavior and high surge current capability.
• Features no reverse recovery or forward recovery characteristics with temperature-independent switching.
• Optimized for high-temperature operation and qualified according to JEDEC standards.

Diode Arrays Applications

• Switch mode power supply
• Power factor correction
• Solar inverter
• Uninterruptible power supply

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging and marking details. Confirm that the component meets all necessary environmental compliance requirements for the intended application before finalizing procurement decisions.

Diode Arrays Selection Notes

Select this component for applications requiring high efficiency and reduced cooling due to low figure of merit. Ensure thermal management design accounts for the specified thermal resistance values and maximum operating temperatures to maintain reliability under load conditions.

Diode Arrays Part Context

This part belongs to Infineon's 5th Generation thinQ! SiC Schottky Diode series, designed to complement 650V CoolMOS families. It utilizes thin-wafer technology to improve efficiency across all load conditions through enhanced thermal characteristics and optimized electrical performance.

Diode Arrays Replacement Considerations

Consult official replacement guides for compatible components within the same generation or voltage class. Verify pinout compatibility and thermal resistance specifications when substituting to ensure system integrity.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is 650 V at a junction temperature of 25°C.

Does the device exhibit reverse recovery charge?

No, the device features no reverse recovery charge, which contributes to its benchmark switching behavior.

What is the typical forward voltage at 16 A and 25°C?

The typical forward voltage (VF) is 1.5 V when the forward current is 16 A and the junction temperature is 25°C.