IPA032N06N3GXKSA1

Single FETs, MOSFETs Overview

The Infineon Technologies IPA032N06N3GXKSA1 is an N-channel enhancement-mode MOSFET belonging to the OptiMOS 3 series. It features a maximum drain-source voltage of 60 V and a continuous drain current of 84 A at 25°C. The device exhibits a low on-state resistance of 3.2 mΩ, with typical gate charge of 124 nC at 10 V. It operates within a temperature range of -55°C to +175°C and dissipates up to 41 W of power. The component utilizes a TO-220FP-3 through-hole package.

Single FETs, MOSFETs Feature Summary

• Optimized for high-efficiency power switching applications
• Low on-state resistance for reduced conduction losses
• Enhanced thermal performance capabilities

Single FETs, MOSFETs Applications

• Power supply circuits
• Motor control systems
• Industrial automation equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix GXKSA1 against official Infineon documentation to confirm exact manufacturing lot details and compliance status. Confirm availability as this part number may be subject to obsolescence or lifecycle changes. Ensure compatibility with existing thermal management designs given the specified power dissipation limits.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with high current handling is required in a through-hole package. Compare the 3.2 mΩ on-resistance against circuit requirements to ensure efficiency targets are met. Consider the 84 A current rating relative to peak load demands and derating factors at elevated operating temperatures.

Single FETs, MOSFETs Part Context

This device is part of Infineon's OptiMOS 3 portfolio, designed for general-purpose power switching. It serves as a successor or alternative to previous generations like OptiMOS 2, offering improved figure-of-merit characteristics. The TO-220FP-3 package provides robust mechanical stability for industrial environments.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage class if supply constraints exist. Verify that any substitute maintains similar Rds(on) and Qg specifications to preserve circuit timing and efficiency.