IPA052N08NM5SXKSA1

$2.53

Description：MOSFET N-CH 80V 64A TO220
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tube

SKU:7086946f9d5d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPA052N08NM5SXKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 64A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPA052N08NM5SXKSA1

Description：MOSFET N-CH 80V 64A TO220
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：5.2mOhm @ 32A, 10V
Vgs(th) (Max) @ Id：3.8V @ 65µA
Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3800 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：38W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220 Full Pack
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for IPA052N08NM5SXKSA1

IPA052N08NM5SXKSA1

Single FETs, MOSFETs Overview

The IPA052N08NM5S is an N-channel OptiMOS™ 5 power transistor with a drain-source voltage of 80 V. It features a maximum on-resistance of 5.2 mΩ at VGS=10V and supports a continuous drain current of 64 A at TC=25°C. The device operates within a junction temperature range of -55°C to 175°C and has a total power dissipation of 38 W. Key dynamic parameters include a typical gate charge of 42 nC and an output charge of 51 nC. It utilizes the PG-TO 220 FullPAK package.

Single FETs, MOSFETs Feature Summary

Optimized for high-frequency switching and synchronous rectification applications
Excellent figure of merit combining low gate charge and low on-resistance
Features very low on-resistance for improved efficiency
Subjected to 100% avalanche testing for enhanced reliability

Single FETs, MOSFETs Applications

High frequency switching circuits
Synchronous rectification systems
Power conversion modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against official Infineon documentation to ensure correct package and marking identification. Confirm RoHS compliance and halogen-free status requirements prior to integration. Cross-reference thermal resistance values with actual mounting conditions to validate system performance limits.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust 80 V handling with optimized switching losses. Evaluate the thermal characteristics against the expected operating temperature range. Consider the gate charge specifications when designing drive circuits for optimal switching speed and efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 5 family, representing advanced power MOSFET technology from Infineon Technologies. It is designed to meet the demands of modern power electronics by balancing conduction losses with switching performance in standard through-hole packages.