IPB009N03LGATMA1

Single FETs, MOSFETs Overview

The IPB009N03LGATMA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 3 technology. It features a 30 V drain-source voltage (Vds) and supports a continuous drain current (Id) of 180 A at case temperature. The device exhibits a maximum on-state resistance (Rds(on)) of 700 mOhms at Vgs = 10 V. Key electrical parameters include a gate charge (Qg) of 227 nC, a threshold voltage (Vgs(th)) of 1 V, and a power dissipation (Pd) of 250 W. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a TO-263-7 (D2PAK-7) surface-mount package.

Single FETs, MOSFETs Feature Summary

• OptiMOS 3 technology provides optimized switching performance with low on-state resistance for high-efficiency power conversion.
• Robust thermal design enables high current handling capability up to 180 A in a compact surface-mount package.
• Enhanced ruggedness ensures reliable operation under hard switching conditions and high di/dt stress.

Single FETs, MOSFETs Applications

• Low-voltage DC-DC converter modules
• Synchronous rectification in server power supplies
• Battery management systems
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'GATMA1' against official Infineon documentation to confirm tape-and-reel packaging and lead frame finish. Confirm component status as End-of-Life or Not Recommended for New Designs prior to procurement planning. Ensure compatibility with existing PCB footprints for the TO-263-7 package. Validate RoHS compliance and REACH SVHC status through the manufacturer's latest declaration.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V rating and high current capacity are required for synchronous rectification or low-side switching. Compare Rds(on) and Qg values against alternative OptiMOS 3 devices to balance conduction losses and switching speed. Consider the thermal resistance characteristics of the TO-263-7 package for heat sink requirements. Evaluate system voltage margins to ensure the 30 V breakdown voltage is sufficient for transient spikes.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family of N-channel power MOSFETs designed for low-voltage applications. The series emphasizes low on-resistance and fast switching capabilities. Similar parts in the lineup vary by voltage rating and current capacity, offering designers flexibility for different power levels while maintaining consistent package dimensions and thermal performance characteristics.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the OptiMOS 3 portfolio that may have updated manufacturing status. Verify if newer generations offer improved figures of merit without requiring layout changes. Consult official substitution lists for any recommended upgrades due to end-of-life status.