IPB020N04NGATMA1

Single FETs, MOSFETs Overview

The IPB020N04NGATMA1 is an N-channel enhancement-mode power MOSFET from the OptiMOS 3 series. It features a maximum drain-source voltage of 40 V and a continuous drain current of 140 A at 25°C. The device has a maximum on-resistance of 2 mΩ and a typical gate charge of 90 nC at 10 V. It operates within a temperature range of -55 °C to +175 °C, with a maximum power dissipation of 167 W. The component utilizes a D2PAK (TO-263) surface-mount package with seven pins.

Single FETs, MOSFETs Feature Summary

• OptiMOS 3 technology provides optimized performance for low-voltage applications
• Wide Safe Operating Area (SOA) ensures robust operation under various conditions
• Lead-free plastic package designed for high thermal efficiency

Single FETs, MOSFETs Applications

• Motor control systems
• Power supply circuits
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix ATMA1 to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official Infineon documentation before integration. Check for any specific product qualification reports or FIT data required for your application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V rating and high current capacity are required in a TO-263 form factor. Consider the 2 mΩ on-resistance for conduction loss calculations. Ensure the thermal management design supports the 167 W dissipation capability within the specified operating temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family, which focuses on improving efficiency and reliability in low-voltage power switching. The IPB prefix indicates an Infineon Power Bipolar/MOSFET product line. The D2PAK-7 package offers enhanced thermal performance compared to standard three-terminal variants.