IPB47N10S33ATMA1

$2.02

Description：MOSFET N-CH 100V 47A TO263-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:af8b1d7687a5 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPB47N10S33ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 47A TO263-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB47N10S33ATMA1

Description：MOSFET N-CH 100V 47A TO263-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：33mOhm @ 33A, 10V
Vgs(th) (Max) @ Id：4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：105 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：175W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3-2
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB47N10S33ATMA1

IPB47N10S33ATMA1

Single FETs, MOSFETs Overview

The IPB47N10S33ATMA1 is an N-channel enhancement mode power MOSFET from Infineon Technologies, utilizing SIPMOS technology. It features a maximum drain-source voltage of 100 V and a continuous drain current of 47 A at 25°C case temperature. The device has a maximum on-state resistance of 33 mΩ at VGS=10V and ID=33A. It operates within a junction temperature range of -55°C to +175°C with a power dissipation rating of 175 W. The component is housed in a PG-TO263-3-2 (D2PAK) package.

Single FETs, MOSFETs Feature Summary

Enhancement mode N-channel construction
Rated for avalanche energy operation
Capable of high dv/dt switching performance

Single FETs, MOSFETs Applications

General purpose power switching applications
DC-DC converter circuits
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code SP0002-25702 corresponds to the required PG-TO263-3-2 package variant. Confirm that the ATMA1 suffix aligns with the intended reel packaging specifications. Ensure design compliance with the specified thermal resistance limits and operating temperature ranges provided in the official datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a robust 100 V N-channel solution is required. The SIPMOS technology provides reliable performance for standard power switching tasks. Consider the thermal characteristics and package constraints during PCB layout to ensure safe operation within the defined junction temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the IPx47N10S-33 family, which includes variants in different packages such as PG-TO220-3-1 and PG-TO262-3-1. All variants share identical electrical characteristics but differ in physical mounting configurations. The IPB variant specifically utilizes the surface-mount D2PAK form factor.