IPB77N06S3-09

Single FETs, MOSFETs Overview

The IPB77N06S3-09 is an N-channel OptiMOS-T2 power transistor designed for automotive applications. It features a maximum drain-source voltage of 55 V and a continuous drain current of 77 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 7.4 mΩ in the SMD version. It supports a junction temperature range from -55 °C to +175 °C and includes avalanche testing. Thermal resistance from junction to case is 1.4 K/W.

Single FETs, MOSFETs Feature Summary

• Automotive AEC-Q101 qualified
• OptiMOS-T2 technology
• Green product compliant with RoHS standards
• 100% avalanche tested

Single FETs, MOSFETs Applications

• Automotive power switching
• General purpose low-side switching
• High current load control

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the IPB77N06S3-09 designation corresponds to the PG-TO263-3-2 package. Ensure that the design accounts for the thermal resistance values provided for the specific mounting configuration. Confirm that the application environment remains within the specified operating temperature limits and that gate drive voltages do not exceed the absolute maximum ratings.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with high current capability and automotive qualification is needed. Consider the PG-TO263-3-2 package for surface mount applications requiring efficient heat dissipation. Evaluate the thermal performance based on the specific PCB layout and cooling area available, as thermal resistance to ambient varies significantly with footprint size.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS-T2 family, which utilizes trench gate technology to achieve low on-resistance and fast switching speeds. The family is characterized by high reliability and suitability for demanding automotive environments. The IPB77N06S3-09 represents a specific current and voltage rating within this broader portfolio of power transistors.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IPI77N06S3-09 (PG-TO262-3-1) and IPP77N06S3-09 (PG-TO220-3-1), which share identical electrical characteristics but differ in physical package form factor.