IPB80N04S204ATMA2

Single FETs, MOSFETs Overview

The IPB80N04S2-04 is an N-channel enhancement mode OptiMOS power transistor designed for surface-mount applications. It features a PG-TO263-3-2 package and operates with a drain-source voltage of 40 V and a continuous drain current of 80 A at Tc=25°C. The maximum on-state resistance is 3.4 mΩ, while the gate threshold voltage ranges from 2.1 V to 4.0 V. Total gate charge reaches 170 nC, and the device supports junction temperatures up to 175°C with a thermal resistance of 0.5 K/W.

Single FETs, MOSFETs Feature Summary

• Automotive AEC-Q101 qualified for high reliability
• Ultra-low on-state resistance for efficient conduction
• 100% avalanche tested for robust performance
• Lead-free green package compliant with environmental standards

Single FETs, MOSFETs Applications

• Automotive power management systems
• High-efficiency DC-DC converters
• Motor control circuits
• Industrial power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code SP0002-18154 matches the required PG-TO263-3-2 package configuration. Confirm that the component meets the automotive AEC-Q101 qualification requirements for your target application environment. Ensure compatibility with lead-free soldering processes given the green package specification.

Single FETs, MOSFETs Selection Notes

Select this component when a low Rds(on) value is critical for minimizing conduction losses in high-current scenarios. The 40V rating suits low-voltage automotive and industrial systems. Consider the 175°C operating temperature capability for high-thermal-stress environments requiring robust junction-to-case thermal performance.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS family, specifically utilizing trench technology for enhanced power density. It is part of a series including IPP and IPI variants distinguished by their respective through-hole or different surface-mount packages. The product line emphasizes low switching losses and high reliability for demanding electronic applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the IPP80N04S2-04 (PG-TO220-3-1) and IPI80N04S2-04 (PG-TO262-3-1). These share identical electrical characteristics but differ in physical mounting style. Verify footprint compatibility before substitution.