IPD50N04S408ATMA1

Single FETs, MOSFETs Overview

The IPD50N04S408ATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS-T2 series, housed in a PG-TO252-3-313 (DPAK) surface-mount package. It features a maximum drain-source voltage of 40 V and a continuous drain current of 50 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 7.9 mΩ at VGS=10V and ID=50A. Key electrical parameters include a gate threshold voltage range of 2.0 V to 4.0 V, total gate charge up to 22.4 nC, and a thermal resistance junction-to-case of 3.3 K/W. It supports an operating temperature range of -55°C to +175°C and is qualified under AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

• OptiMOS-T2 technology providing optimized low on-state resistance for high efficiency
• Automotive-grade qualification compliant with AEC-Q101 standards
• Robust avalanche performance verified through 100% single-pulse avalanche testing
• High thermal stability supporting operation up to 175°C junction temperature

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Low-side switching applications in vehicle electronics
• DC-DC converter stages requiring robust transient handling
• Motor control circuits within automotive environments

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm that the specific revision matches design requirements, as datasheet revisions may update thermal or electrical limits. Ensure sourcing channels provide original manufacturer documentation to validate authenticity against counterfeiting risks common in high-volume semiconductor markets.

Single FETs, MOSFETs Selection Notes

Select this component when designing for 40 V automotive systems requiring high current capacity in a standard DPAK footprint. The OptiMOS-T2 technology offers a balance between conduction losses and switching speed suitable for general-purpose low-side switching. Consider the 7.9 mΩ RDS(on) limit for thermal management calculations and verify that the PCB copper area meets the specified cooling requirements for optimal heat dissipation.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS-T2 family, specifically engineered for automotive applications demanding high reliability and low loss. The IPD50N04S4-08 designation indicates a 40 V, 50 A class device. The 'TMA1' suffix typically denotes the specific reel packaging format used for automated surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the PG-TO252-3 package, 40 V rating, and similar RDS(on) characteristics. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with other OptiMOS-T2 variants offering comparable current ratings if higher performance is required.

Single FETs, MOSFETs FAQ

Is the IPD50N04S408ATMA1 suitable for high-temperature automotive environments?

Yes, the device is rated for a junction temperature range of -55°C to +175°C and holds AEC-Q101 qualification, making it suitable for harsh automotive conditions.

What is the maximum pulsed drain current capability?

The device can handle a pulsed drain current of 200 A at a case temperature of 25°C, limited by bondwire capabilities.