IPD60R180CM8XTMA1

$1.62

Description：IPD60R180CM8XTMA1
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:63a4c1dbc8c1 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPD60R180CM8XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IPD60R180CM8XTMA1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPD60R180CM8XTMA1

Description：IPD60R180CM8XTMA1
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：18A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id：4.7V @ 140µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：743 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：127W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO252-3-313
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IPD60R180CM8XTMA1

IPD60R180CM8XTMA1

Single FETs, MOSFETs Overview

The IPD60R180CM8XTMA1 is a single N-channel CoolMOS CM8 power MOSFET in PG-TO252-3 packaging. It features a drain-source breakdown voltage of 600 V and a maximum on-state resistance of 180 mΩ at 25°C. The device supports a continuous drain current of 18 A at 25°C case temperature, with a pulsed current capability of 48 A. Total gate charge is typically 17 nC. Thermal performance includes a junction-to-case thermal resistance of 0.98 K/W and an operating junction temperature range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Built on the superjunction principle for low switching and conduction losses
Integrated fast body diode with high commutation ruggedness
Low ringing tendency suitable for hard and soft switching topologies
Advanced die attach technique for simplified thermal management

Single FETs, MOSFETs Applications

Power supplies and converters
PFC stages and LLC resonant converters
High efficiency switching applications such as server and telecom equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XTMA1 against official Infineon documentation to confirm package marking and reel specifications. Confirm JEDEC industrial qualification status for target environments. Ensure PCB footprint matches the PG-TO252-3 outline dimensions provided in the datasheet before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust hard commutation handling and low EMI due to reduced ringing. Evaluate the 180 mΩ RDS(on) against system conduction loss requirements at expected operating temperatures. Consider the 17 nC gate charge for driver selection and switching frequency optimization in PFC or LLC converter designs.

Single FETs, MOSFETs Part Context

This transistor belongs to the 600V CoolMOS CM8 series, succeeding the CoolMOS C7 generation. It utilizes Infineon's superjunction technology to achieve superior figure-of-merit values compared to previous generations. The CM8 platform specifically targets improved ease of use through lower ringing tendencies while maintaining excellent avalanche energy capabilities.