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IPD60R520C6ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 8.1A TO252-3. Review the specifications below when checking this part for your BOM.
The IPD60R520C6ATMA1 is a single N-channel enhancement mode MOSFET from Infineon's CoolMOS C6 series. It features a 600 V drain-source voltage and a typical on-resistance of 520 mΩ at 25°C. The device supports a continuous drain current of 8.3 A in the TO-252-3 (DPAK) surface-mount package. Key electrical parameters include a gate threshold voltage of 3 V, a total gate charge of 14 nC, and a maximum power dissipation of 47 W. Operating temperatures range from -55°C to +150°C.
Verify the specific datasheet revision and RoHS compliance status directly with Infineon or authorized distributors before integration. Confirm that the TO-252-3 footprint matches your PCB design requirements. Ensure thermal management solutions account for the specified power dissipation limits under actual operating conditions.
Select this component when a balance between low conduction losses and manageable gate drive requirements is needed for 600 V applications. The 520 mΩ resistance offers a middle ground between higher current and lower voltage variants within the CoolMOS C6 family. Consider the 14 nC gate charge for driver compatibility in medium-speed switching circuits.
This part belongs to the CoolMOS C6 product line, representing an evolution in superjunction MOSFET technology. It succeeds earlier generations like P6 and P7 by offering improved figure-of-merit values. The DPAK package provides a cost-effective solution for mid-power applications requiring reliable surface-mount assembly.
Direct replacements within the same series include IPD60R380C6ATMA1 for lower resistance or IPD60R950C6ATMA1 for lower gate charge. Cross-series alternatives such as the P7 series may require re-evaluation of thermal and switching characteristics due to different internal architectures.
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