Single FETs, MOSFETs IPD60R520C6ATMA1 product image

IPD60R520C6ATMA1

$1.27
  • Description:MOSFET N-CH 600V 8.1A TO252-3
  • Series:CoolMOS™ C6
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:4f6866ed3270 Category: Brand:

  
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IPD60R520C6ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 8.1A TO252-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPD60R520C6ATMA1

  • Description:MOSFET N-CH 600V 8.1A TO252-3
  • Series:CoolMOS™ C6
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:520mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs:23.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:512 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):66W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO252-3
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IPD60R520C6ATMA1

IPD60R520C6ATMA1

Single FETs, MOSFETs Overview

The IPD60R520C6ATMA1 is a single N-channel enhancement mode MOSFET from Infineon's CoolMOS C6 series. It features a 600 V drain-source voltage and a typical on-resistance of 520 mΩ at 25°C. The device supports a continuous drain current of 8.3 A in the TO-252-3 (DPAK) surface-mount package. Key electrical parameters include a gate threshold voltage of 3 V, a total gate charge of 14 nC, and a maximum power dissipation of 47 W. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes CoolMOS C6 technology for optimized low-loss performance
  • Designed for high-efficiency switching applications
  • Robust avalanche energy capability

Single FETs, MOSFETs Applications

  • High-frequency power supplies
  • Motor control systems
  • DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with Infineon or authorized distributors before integration. Confirm that the TO-252-3 footprint matches your PCB design requirements. Ensure thermal management solutions account for the specified power dissipation limits under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a balance between low conduction losses and manageable gate drive requirements is needed for 600 V applications. The 520 mΩ resistance offers a middle ground between higher current and lower voltage variants within the CoolMOS C6 family. Consider the 14 nC gate charge for driver compatibility in medium-speed switching circuits.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS C6 product line, representing an evolution in superjunction MOSFET technology. It succeeds earlier generations like P6 and P7 by offering improved figure-of-merit values. The DPAK package provides a cost-effective solution for mid-power applications requiring reliable surface-mount assembly.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same series include IPD60R380C6ATMA1 for lower resistance or IPD60R950C6ATMA1 for lower gate charge. Cross-series alternatives such as the P7 series may require re-evaluation of thermal and switching characteristics due to different internal architectures.

IPD60R520C6ATMA1IPD60R520C6ATMA1
$1.27
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