IPD70R950CEAUMA1

Single FETs, MOSFETs Overview

The IPD70R950CEAUMA1 is a 700V CoolMOS CE N-channel power MOSFET utilizing superjunction technology. It features a PG-TO252 package with a maximum drain-source voltage of 750V and a typical continuous drain current of 7.4A at 25°C case temperature. The device exhibits a maximum on-state resistance of 0.95Ω at VGS=10V and 25°C, with a typical gate charge of 15.3nC. Thermal performance includes a junction-to-case thermal resistance of 1.85°C/W and a junction-to-ambient resistance of 62°C/W in leaded configurations.

Single FETs, MOSFETs Feature Summary

• Optimized for cost-sensitive consumer and lighting applications while maintaining high efficiency standards through low FOM Rdson*Qg and Eoss.
• Provides extremely low switching losses and very high commutation ruggedness due to the fast-switching Superjunction MOSFET architecture.
• Designed for ease of use and drive, featuring Pb-free plating and halogen-free mold compound.

Single FETs, MOSFETs Applications

• Adapter power supplies
• LCD and PDP TV power circuits
• Indoor lighting systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix AUMA1 against official Infineon documentation to confirm automotive-grade qualification status and RoHS compliance details. Ensure the component matches the PG-TO252 package outline dimensions provided in the datasheet. Cross-reference the manufacturer part number directly with the final data sheet revision history to validate authenticity and technical specifications before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 700V blocking capability with moderate current handling up to 7.4A. Consider the thermal resistance values when designing heat dissipation strategies for the PG-TO252 package. Evaluate the gate charge requirements against the driver capabilities to ensure efficient switching performance within the target application's operating frequency range.

Single FETs, MOSFETs Part Context

This device belongs to the CoolMOS CE series, a price-performance optimized platform by Infineon Technologies. The series targets cost-sensitive markets such as consumer electronics and lighting. It combines the benefits of fast-switching superjunction technology with robust reliability, offering a competitive cost-down performance ratio compared to standard planar MOSFETs.

Single FETs, MOSFETs Replacement Considerations

Officially documented related part numbers include IPI70R950CE (PG-TO262) and IPS70R950CE (PG-TO251). These variants share identical electrical characteristics but differ in physical package form factors. Verify mechanical fit and thermal interface compatibility when substituting between these package types.

Single FETs, MOSFETs FAQ

What is the maximum avalanche energy rating for single-pulse operation?

The single-pulse avalanche energy (EAS) rating is 50 mJ, tested under conditions of ID=1A and VDD=50V.

How does the on-state resistance vary with temperature?

The drain-source on-state resistance increases with temperature. At 25°C, the maximum RDS(on) is 0.95Ω, rising to a maximum of 2.22Ω at 150°C under the same test conditions.