IPDQ60R020CFD7XTMA1

$12.44

Description：HIGH POWER_NEW
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bbe31cd01223 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IPDQ60R020CFD7XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is HIGH POWER_NEW. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPDQ60R020CFD7XTMA1

Description：HIGH POWER_NEW
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：112A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：20mOhm @ 42.4A, 10V
Vgs(th) (Max) @ Id：4.5V @ 2.12mA
Gate Charge (Qg) (Max) @ Vgs：186 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7395 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：543W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-HDSOP-22-1
Package / Case：22-PowerBSOP Module

Single FETs, MOSFETs datasheet and documents for IPDQ60R020CFD7XTMA1

IPDQ60R020CFD7XTMA1

Single FETs, MOSFETs Overview

The IPDQ60R020CFD7 is a 600V CoolMOS CFD7 power transistor in PG-HDSOP-22 packaging. It features a maximum drain-source voltage of 650V and an on-state resistance of 20mΩ. Typical gate charge is 186nC, with a pulsed drain current capability of 360A. Effective output capacitance energy at 400V is 21.5µJ. The body diode supports a commutation speed of 1300A/µs.

Single FETs, MOSFETs Feature Summary

Optimized for soft-switching applications like phase-shift full-bridge and LLC topologies
Features ultra-fast body diode with best-in-class reverse recovery charge
Provides improved MOSFET reverse diode dv/dt and diF/dt ruggedness
Delivers lowest figure of merit RDS(on)*Qg and RDS(on)*Eoss

Single FETs, MOSFETs Applications

Phase-shift full-bridge (ZVS) converters
LLC resonant converters
Server power supplies
Telecom power systems
EV charging stations

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code IPDQ60R020CFD7 against official Infineon documentation to ensure correct package type PG-HDSOP-22 and temperature grade. Confirm that source and sense source pins are not exchanged during assembly to prevent malfunction. Validate JEDEC industrial qualification status for the intended application environment.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency resonant topologies requiring low gate charge and fast body diode recovery. Ensure thermal management accounts for the 0.23°C/W junction-to-case thermal resistance. Verify that the 650V breakdown voltage exceeds the maximum circuit voltage stress. Consider the 360A pulsed current rating for transient load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the CoolMOS CFD7 series, succeeding the CFD2 platform. It utilizes superjunction technology to optimize performance in resonant converters. The PG-HDSOP-22 package provides a compact solution with a tab connected to the drain for efficient heat dissipation.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for compatible alternatives within the CoolMOS CFD7 family. Verify pinout compatibility and electrical parameter equivalence before replacing existing designs.