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IPDQ60R022S7XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is HIGH POWER_NEW PG-HDSOP-22. Review the specifications below when checking this part for your BOM.
The IPDQ60R022S7 is a 600V CoolMOS S7 power device in the PG-HDSOP-22 package. It features a maximum drain-source on-state resistance of 22 mΩ at VGS=12V and ID=23A. The continuous drain current rating is 24 A at TC=140°C, with a pulsed drain current capability of 375 A. Total gate charge is typically 150 nC. The device supports an operating junction temperature range from -55°C to +150°C and offers a thermal resistance (junction-to-case) of 0.3 °C/W.
Verify that the specific ordering code matches the required package variant. Confirm that the application environment does not exceed the specified maximum junction temperature limits. Ensure proper PCB layout utilizes the exposed tab for thermal dissipation as defined in the datasheet thermal characteristics section.
Select this component for applications requiring optimized price-performance in low-frequency switching scenarios. The Kelvin source pin requires distinct placement of gate resistors compared to standard four-pin MOSFETs. Evaluate cosmic radiation effects if the blocking voltage exceeds 70% of the rated value.
This part belongs to the Infineon CoolMOS S7 family, which is engineered for static switching and high-current applications. The series focuses on minimizing conduction losses to reduce or eliminate heat sinks, thereby enabling more compact system designs and lower total cost of ownership over prolonged operational lifetimes.
Direct replacements within the same CoolMOS S7 family include IPDQ60T022S7XTMA1. Verify pinout compatibility and thermal resistance specifications when substituting components from different manufacturers or older technology generations.
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