IPI023NE7N3 G

Single FETs, MOSFETs Overview

The IPI023NE7N3 G is an N-channel enhancement-mode power MOSFET from Infineon’s OptiMOS 3 series, housed in a TO-262-3 (I²PAK) through-hole package. It features a drain-source voltage of 75 V and a continuous drain current of 100 A to 120 A. The device exhibits a low on-resistance of 2.3 mΩ at 10 V gate drive. Key electrical parameters include a maximum gate-source voltage of ±20 V, a threshold voltage of approximately 3 V, and a total gate charge of 23 nC. Power dissipation reaches 300 W, with an operating temperature range spanning -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Optimized for high efficiency via ultra-low on-resistance technology
• Robust thermal performance supporting high power dissipation
• Designed for fast switching applications with low gate charge

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power supply units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and revision code against the manufacturer's latest datasheet to ensure component compatibility. Confirm RoHS compliance status and check for any end-of-life notices or recommended new designations. Ensure the through-hole package dimensions match your PCB footprint requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required for through-hole assembly. The OptiMOS 3 technology provides superior conduction losses compared to standard planar technologies. Consider the 75 V rating and 100 A+ current capability for applications demanding efficient power handling in compact packages.

Single FETs, MOSFETs Part Context

This part belongs to Infineon’s OptiMOS 3 family, which utilizes advanced trench gate and field-stop technologies. These MOSFETs are engineered to minimize conduction and switching losses simultaneously. The I²PAK package offers reliable soldering and effective heat dissipation for industrial and automotive environments.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same OptiMOS 3 series that may offer updated availability. Verify that substitute parts maintain identical voltage, current, and thermal specifications to ensure circuit integrity without redesign.