IPI086N10N3GXKSA1

Single FETs, MOSFETs Overview

The IPI086N10N3 G is an N-channel OptiMOS™3 power transistor in a PG-TO262-3 (I2PAK) package. It features a drain-source voltage of 100 V and a continuous drain current of 80 A at 25 °C, with a maximum on-resistance of 8.6 mΩ at VGS=10 V. The device supports a pulsed drain current of 320 A and operates within a junction temperature range of -55 °C to 175 °C. Key electrical parameters include a total gate charge of 42 nC typ., thermal resistance from junction to case of 1.2 K/W, and avalanche energy capability of 110 mJ.

Single FETs, MOSFETs Feature Summary

• Optimized for high-frequency switching and synchronous rectification applications
• Features excellent gate charge and on-resistance product for efficiency
• Qualified according to JEDEC standards for target applications
• Halogen-free construction compliant with IEC61249-2-21

Single FETs, MOSFETs Applications

• High-frequency switching circuits
• Synchronous rectification modules
• Industrial power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm packaging details and regional availability. Ensure that the procurement channel provides valid traceability for the PG-TO262-3 package variant. Cross-reference the component marking '086N10N' with the datasheet to authenticate the part before integration into production lines.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with low on-resistance is required for 100 V applications. The PG-TO262-3 package offers suitable thermal performance for through-hole mounting. Consider the 8.6 mΩ maximum RDS(on) and 80 A continuous current rating to ensure adequate headroom for the intended load conditions and operating temperatures.

Single FETs, MOSFETs Part Context

This component belongs to the OptiMOS™3 family of power transistors designed by Infineon Technologies. It shares core electrical characteristics with the IPP086N10N3 G, IPB083N10N3 G, and IPD082N10N3 G models, differing primarily in the mechanical package configuration. The IPI086N10N3 G specifically utilizes the PG-TO262-3 form factor.

Single FETs, MOSFETs Replacement Considerations

Direct functional equivalents include IPP086N10N3 G, IPB083N10N3 G, and IPD082N10N3 G. Verify pinout compatibility and thermal resistance differences due to package variations before substitution.